A study on the relation between film quality and deposition rate for amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4

Abstract

The relation between film quality and deposition rate of hydrogenated amorphous silicon films deposited by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4 has been investigated. The properties of amorphous silicon films were improved with increasing deposition rate; photoconductivity increased and optical band gap, full width at half maximum and the ratio of the concentration of dihydride to that of monohydride decreased. The high deposition rate was a very important factor to obtain high quality amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4.