Crystal orientation dependencies on the ferroelectric properties of SrBi2Ta2O9, CaBi2Ta2O9 thin films fabricated by the rf magnetron sputtering technique

Abstract

Crystal orientation of the SrBi2Ta2O9, CaBi2Ta2O9 thin films were controlled by the r.f. sputtering pressure. The Pt/SBTO/Pt capacitor having a c-axis oriented films shows P*r-P boolean AND r=16.3 mu C/cm(2) and Ec=50kV/cm which is superior than the films showing polycrystalline structure. The surface morphologies of the SrBi2Ta2O9 thin films show two kinds of grains which was changed by the sputtering conditions.