Low temperature polycrystalline line silicon thin film transistor with silicon nitride ion stopper

Abstract

The authors have fabricated a new low temperature polycrystalline silicon (poly-Si) thin film transistor (TFT) with silicon nitride (SiNx) ion-stopper and laser annealed poly-Si, The fabricated poly-Si TFT using SiNx as the ion-stopper as well as the gate insulator exhibited a held effect mobility of 110 cm(2)/Vs, threshold voltage of 3.5 V, subthreshold slope of 0.48 V/dec., and on/off current ratio of similar to 10(6). Low off-state leakage current of 2.4 x 10(-12) A/mu m at the drain voltage of 5 V and gate voltage of -5 V was achieved.