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Dopant activation and strain relaxation in P-implanted metastable pseudomorphic Ge//0//.//1//2Si//0//.//8//8 grown on Si(100).

Authors

송종한; D. Y. C. Lie; N. D. Theodore

Issue Date

1996-02

Publisher

Elsevier BV

Citation

Applied Surface Science, v.v. 92, pp.557 - 565

ISSN

0169-4332

URI

https://pubs.kist.re.kr/handle/201004/144541

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KIST Article > Others

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