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Strain evolution and dopant activation in P-implanted metastable pseudomorphic Si(100)/Ge//0//.//1//2Si//0//.//8//8.

Authors

송종한; D. Y. C. Lie; F. Eisen; M. A. Nicolet

Issue Date

1996-01

Citation

Journal of electronic materials, v.v. 25, no.no.1, pp.87 - 92

Keywords

dopant activation

URI

https://pubs.kist.re.kr/handle/201004/144728

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KIST Article > Others

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