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MOLECULAR-DYNAMICS STUDY OF DEFECT FORMATION IN A-SI-H

Authors

PARK, YK; MYLES, CW

Issue Date

1995-01-15

Publisher

AMERICAN PHYSICAL SOC

Citation

PHYSICAL REVIEW B, v.51, no.3, pp.1671 - 1679

Keywords

HYDROGENATED AMORPHOUS-SILICON; TIGHT-BINDING; ELECTRONIC-STRUCTURE; METASTABLE DEFECTS; SIMULATIONS; MODELS; CONDUCTIVITY; GENERATION; STATES; BONDS; HYDROGENATED AMORPHOUS-SILICON; TIGHT-BINDING; ELECTRONIC-STRUCTURE; METASTABLE DEFECTS; SIMULATIONS; MODELS; CONDUCTIVITY; GENERATION; STATES; BONDS

ISSN

0163-1829

URI

https://pubs.kist.re.kr/handle/201004/145199

DOI

10.1103/PhysRevB.51.1671

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KIST Article > Others

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