SURFACE MORPHOLOGIES OF BATIO3 THIN-FILMS BY ATOMIC-FORCE MICROSCOPY

Authors
YOON, YSYOON, YKLEE, JYYOM, SS
Issue Date
1994-07
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.33, no.7A, pp.4075 - 4079
Abstract
Surface morphologies of BaTiO3 thin films have been studied by atomic force microscopy (AFM). The films on (111)InSb, indium tin oxide (ITO)-coated glass and (100)Si substrates are deposited by in-situ metalorganic chemical vapor deposition (MOCVD) at different deposition temperatures of 300-degrees-C, 400-degrees-C and 600-degrees-C, respectively. AFM under ambient conditions showed that the BaTiO3 film deposited on the ITO-coated glass had a smooth surface consisting of large hemispherical grains, while the film on (100)Si had a slightly rough surface with [110]textured rectangular grains. As-grown film on the (111)InSb substrate was in the amorphous phase except near the interface, resulting in a rough surface. Our results of dependence on the kind of substrates and growth temperature suggest that the surface morphology of the as-grown films is strongly influenced by the crystallinity and growing characteristic of the film. For low-temperature growth below the deposition temperature of 600-degrees-C, surface roughness of the BaTiO3 film is strongly dependent on growth temperature rather than crystallinity of the films related to substrates.
Keywords
CHEMICAL VAPOR-DEPOSITION; PULSED LASER DEPOSITION; BARIUM-TITANATE FILMS; ELECTRICAL-PROPERTIES; EPITAXIAL-GROWTH; BUFFER LAYERS; SUBSTRATE; SILICON; CHEMICAL VAPOR-DEPOSITION; PULSED LASER DEPOSITION; BARIUM-TITANATE FILMS; ELECTRICAL-PROPERTIES; EPITAXIAL-GROWTH; BUFFER LAYERS; SUBSTRATE; SILICON; BATIO3 THIN FILM; MOCVD; AFM; SI; INSB; ITO GLASS
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/145551
DOI
10.1143/JJAP.33.4075
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KIST Article > Others
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