INDIUM-DOPED HG0.7CD0.3TE/UNDOPED HG0.8CD0.2TE/CDTE HETEROJUNCTION GROWN BY TE-RICH LIQUID-PHASE EPITAXY

Abstract

Firstly, we have studied the indium doping concentration dependence of the electrical properties of Hg0.7Cd0.3Te monolayers grown by liquid phase epitaxy (LPE). Below the indium concentration of 1 X 10(18) cm-3, nearly 100% of indium was electrically active. Indium-doped Hg0.7Cd0.3Te /undoped Hg0.8Cd0.2Te/CdTe heterojunction was grown in a double bin graphite boat, using a slider LPE technique. After the growth, Hg-annealing was performed. An n-type Hg0.8Cd0.2Te layer was formed just beneath the 1190.7Cd0.3Te cap layer by Hg-diffusion. The Hg0.8Cd0.2Te p-n homojunction formed thereby would have no misfit defects.