EFFECTS OF CARRIER-VELOCITY SATURATION ON THE CHARACTERISTICS OF SHORT CHANNEL MOSFETS WITH LIGHTLY DOPED DRAINS

Authors
LEE, MBLEE, JIKANG, KNYOON, KSHONG, SLIM, KY
Issue Date
1992-05-16
Publisher
AKADEMIE VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.131, no.1, pp.K77 - K80
Keywords
INVERSION-LAYERS; SILICON; INVERSION-LAYERS; SILICON; MOSFET
ISSN
0031-8965
URI
https://pubs.kist.re.kr/handle/201004/146438
DOI
10.1002/pssa.2211310149
Appears in Collections:
KIST Article > Others
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