KIST Library Institutional Repository

저압 MOCVD 에 의한 GaAs 에피층의 Carbon 도핑특성 .

Authors

김용; 김성일; 민석기; 엄경숙; 김무성; 곽병현; 마동성

Issue Date

1992-01

Citation

응용물리, v.v. 5, no.no. 12, pp.586 - 590

Keywords

저압 MOCVD; GaAs; carbon-doping

URI

https://pubs.kist.re.kr/handle/201004/146667

Appears in Collections:

KIST Article > Others

Files in This Item:

There are no files associated with this item.

Export

RIS (EndNote)

XLS (Excel)

XML