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MOCVD 법으로 Si 기판위에 성장된 GaAs 에피층의 수소화 효과 .

Authors

김용; 김무성; 김은규; 조훈영; 김현수; 민석기

Issue Date

1991-02

Citation

새물리, v.v. 31, pp.31 - 37

Keywords

MOCVD; GaAs-on-Si; DLTS; hydrogenation

URI

https://pubs.kist.re.kr/handle/201004/146845

Appears in Collections:

KIST Article > Others

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