DEEP LEVELS IN SI-IMPLANTED AND RAPID THERMAL ANNEALED SEMI-INSULATING GAAS

Authors
LEE, HSCHO, HYKIM, EKMIN, SKKANG, TWHONG, CY
Issue Date
1991-02
Publisher
MINERALS METALS MATERIALS SOC
Citation
JOURNAL OF ELECTRONIC MATERIALS, v.20, no.2, pp.203 - 206
Abstract
Deep levels have been investigated in Si-implanted and rapid-thermal-annealed semi-insulating GaAs:Cr, which was grown by a horizontal Bridgman method. Samples were implanted with a Si-dose of (1 - 5) x 10(12) ions cm-2 with 100 keV energy, and treated by a two-step rapid thermal annealing process at 900 and 800-degrees-C. After these processes, three electron deep levels at 0.81, 0.53 and 0.62 eV below the conduction band and three hole deep levels at 0.89, 0.64 and 0.42 eV above the valence band were observed. The new deep levels E(c) - 0.53 eV, E(c) - 0.62 eV, and E-epsilon + 0.64 eV in fact, dominate the implantation and/or the thermally damaged region, but are not found in the bulk. These results indicate that high-density deep levels may be induced near or within the implanted region by rapid heating and cooling, and that these defects may effect carrier activation.
Keywords
TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS; ELECTRON TRAPS; MIDGAP LEVELS; HB-GAAS; SPECTROSCOPY; ACTIVATION; MESFETS; TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS; ELECTRON TRAPS; MIDGAP LEVELS; HB-GAAS; SPECTROSCOPY; ACTIVATION; MESFETS; DLTS; RTA; GAAS-CR; SI-IMPLANTATION
ISSN
0361-5235
URI
https://pubs.kist.re.kr/handle/201004/146847
DOI
10.1007/BF02653324
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