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Simple model for gate-voltage dependent parasitic resistance in short channel lightly doped drain metal oxide semiconductor field effect transistors.

Authors

강광남; 이정일; 이명복; S. Y. Lee; 윤경식

Issue Date

1991-01

Citation

Japanese journal of applied physics, v.v. 30, no.no. 4A, pp.L535 - ?

Keywords

MOSFET

URI

https://pubs.kist.re.kr/handle/201004/146878

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KIST Article > Others

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