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Excimer 레이저 annealing 된 HB-GaAs 내의 깊은 준위 연구 .

Authors

김은규; 조훈영; 김성일; 민석기

Issue Date

1989-10

Citation

새물리, v.v. 29, no.no. 5, pp.591 - 596

Keywords

excimer laser; HB-GaAs; deep level

URI

https://pubs.kist.re.kr/handle/201004/147303

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KIST Article > Others

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