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Isothermal capacitance transient spectroscopy(ICTS) study for midgap levels in HB-GaAs by rapid thermal annealing.

Authors

김은규; 조훈형; 민석기; 조성호

Issue Date

1989-08

Citation

Applied physics A, v.v. 48, pp.359 - 363

Keywords

ICTS; midgap level; HB-GaAs; rapid thermal annealing

URI

https://pubs.kist.re.kr/handle/201004/147323

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KIST Article > Others

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