KIST Library Institutional Repository

(100) 실리콘 기판위에 MOCVD 법으로 성장된 GaAs 에피층의 결정구조 특성 .

Authors

김용; 김무성; 김현수; 민석기

Issue Date

1988-07

Citation

응용물리, v.v. 1, pp.121 - ?

Keywords

X-ray diffraction; GaAs-on-Si; MOCVD

URI

https://pubs.kist.re.kr/handle/201004/147561

Appears in Collections:

KIST Article > Others

Files in This Item:

There are no files associated with this item.

Export

RIS (EndNote)

XLS (Excel)

XML