Effect of flow rate ratios of SiH//4/NH//3/N//2 and SiH//4/NH//3/Ar on the properties of PECVD SiN//x:H films.

Authors
김용태김춘근민석기
Issue Date
1988-01
Citation
J. Kor. inst. telem. elec., v.v. 25, pp.490 - 494
URI
https://pubs.kist.re.kr/handle/201004/147637
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KIST Article > Others
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