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RTA 에 따른 HB-GaAs 에서의 midgap level 들에 관한 isothermal capacitance transient spectroscopy (ICTS) 연구 : EL2(I).

Authors

김은규; 조훈영; 한철원; 김춘근; 민석기

Issue Date

1987-12

Citation

새물리, v.27, no.6, pp.674 - 679

Keywords

RTA; HB-GaAs; ICTS; EL2

URI

https://pubs.kist.re.kr/handle/201004/147694

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KIST Article > Others

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