RTA 에 따른 HB-GaAs 에서의 midgap level 들에 관한 isothermal capacitance transient spectroscopy (ICTS) 연구 : EL2(I).

Authors
김은규조훈영한철원김춘근민석기
Issue Date
1987-12
Citation
새물리, v.27, no.6, pp.674 - 679
Keywords
RTA; HB-GaAs; ICTS; EL2
URI
https://pubs.kist.re.kr/handle/201004/147694
Appears in Collections:
KIST Article > Others
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