| - | Fabrication and characterization of homostructure GaAs δ -doped FETs. | KANG KWANG NHAM; Lee Jung Il; KIM YOUN; Han Il Ki; Min Suk-Ki; Y. J. Lee |
| - | Fabrication and characterization of planar resonant tunneling devices incorporating Inas self-assembled quantum dots | 정석구; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU |
| - | Fabrication of HEMT employing delta-doping layer grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; 김현수 |
| - | Fabrication of high-efficiency heteroface AlGaAs/GaAs solar cells grown by MOCVD | 황성민; Kim Seong Il; 이달진; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM YOUN |
| - | Fabrication of quantum dot transistors incorporating single self-assembled quantum dot | 황성우; 정석구; PARK JEONG HO; KIM YOUN; KIM EUN KYU |
| - | Fabrication of quantum well high electron mobility transistor grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; K. H. Yoo; G. Ihm; S. K. Noh |
| - | Fabrication of quantum well laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim; H. S. Oh |
| - | Growth behavior on V-grooved high miller index GaAs substrates by MOCVD. | Park Young Ju; KIM MOO SUNG; KIM YOUN; LEE MIN-SUK; Kim Seong Il; Min Suk-Ki |
| - | Growth interruption dependence of self-assembling behavior of InGaAs quantum dots on exact and misoriented (100) GaAs substrates | KIM YOUN; Min Suk-Ki; KIM EUN KYU; MIN BYUNG DON |
| - | High uniform growth of epilayers by LPMOCVD. | KIM MOO SUNG; KIM YOUN; CHO HOON YOUNG; 강명주; Kim Seong Il; Min Suk-Ki |
| - | Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; KANG JOON MO; 황성민; 박양근 |
| - | Lateral growth rate control of GaAs on patterned substrates by CCl//4 and CBr//4 during MOCVD. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; MIN BYUNG DON; Min Suk-Ki |
| - | Lateral growth rate enhancement on patterned GaAs substrates with CCl//4 by MOCVD. | KIM YOUN; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki |
| - | Lateral transport through self-assembled In(Ga)As quantum dots located in the narrow gap (~ 30 nm) between e-beam patterned electrodes | 정석구; MIN BYUNG DON; KIM YOUN; KIM EUN KYU; 현찬경; 황성우; PARK JEONG HO |
| - | Maskless selective epitaxial growth on patterned GaAs substrates by atmospheric pressure MOCVD | SON CHANG-SIK; Kim Seong Il; PARK YOUNG KYUN; 황성민; 한철구; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | MOCVD 법을 이용한 AlGaAs/GaAs HEMT 의 제작 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | MOCVD 에 의한 화합물반도체 에피 성장 기술 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | Nanometer scale patterning by cantilever-oscillating Atomic Force Microscope (AFM) | 현찬경; 최승철; 황성우; KIM YOUN; KIM EUN KYU |
| - | One-step selective growth of GaAs on V-groove patterned GaAs substrate using CBr4 and CCl4 | KIM EUN KYU; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; SON CHANG-SIK; 한철구; 황성민; Min Suk-Ki; 최인훈 |
| - | Patterned formation of InAs QDs for single electron device applications | 손맹호; 최범호; 황성우; 안도열; 현찬경; KIM EUN KYU; KIM YOUN |
| - | PECVD 방법으로 SiN 박막을 성장함으로써 얻어지는 양자우물 무질서화 및 양자우물의 Al 확산계수의 계산 . | Choi Won Jun; Lee Seok; Jingming Zhang; Lee Jung Il; KIM YOUN; KANG KWANG NHAM; KIM SANG KUK; 조규만 |
| - | Rapid thermal annealing dependence of deep electron traps in GaAs-on-Si grown by MOCVD. | KIM EUN KYU; CHO HOON YOUNG; KIM YOUN; 김현수; Min Suk-Ki; M. S. Kim |
| - | Relaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs grown by MOCVD. | SON CHANG-SIK; KANG JOON MO; KIM YOUN; KIM MOO SUNG; Min Suk-Ki |
| - | Selective control of InAs self-assembled quantum dots on GaAs with sub-micron metal patterns | 손맹호; 최범호; 현찬경; KIM EUN KYU; KIM YOUN; 임종수; AHN JIN HO |
| - | Selective formation of semiconductor quantum dots for device applications | KIM EUN KYU; Park Young Ju; 손맹호; KIM YOUN |
| - | Stress-driven formation of self-assembled InGaAs islands on sub-micron metal-patterned substrate | KIM YOUN; 정석구; MIN BYUNG DON; KIM EUN KYU; 황성우 |
| - | Stress-driven formation of self-assembled InGaAs islands on sub-micron metal-patterned substrate. | 손맹호; 정석구; MIN BYUNG DON; 현찬경; 최범호; KIM EUN KYU; KIM YOUN; 임종수 |
| - | Surface orientation dependent carbon incorporation in to GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; MIN BYUNG DON; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Temperature dependence of photoluminescence peak from carbon-doped GaAs epilayers grown on high miller index GaAs substrates | Cho Shinho; SON CHANG-SIK; 이달진; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki |
| - | Temperature dependence of the electrical properties of carbon doped GaAs. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG |
