Browsing byAuthorHan, IK

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Showing results 10 to 39 of 57

Issue DateTitleAuthor(s)
2005-02Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlatticesSong, JD; Park, YJ; Han, IK; Choi, WJ; Cho, WJ; Lee, JI; Cho, YH; Lee, JY
2005-03-01Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dotsLim, JG; Park, YJ; Park, YM; Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Kim, TW; Kim, HS; Park, CG
2005-02Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dotsKim, JS; Kim, EK; Park, K; Yoon, E; Han, IK; Park, YJ
2003-06Effects of the linewidth enhancement factor on filamentation in 1.55 mu m broad-area laser diodesHeo, DC; Han, IK; Lee, JI; Jeong, JC; Cho, SH
2004-08Effects of the V/III flux ratio on the Curie temperature of GaMnAsKoh, D; Chung, KS; Park, JB; Kim, KM; Park, YJ; Han, IK; Lee, JI
2005-01Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distributionHwang, SH; Lee, JI; Song, JD; Choi, WJ; Han, IK; Chang, SK
2005-02Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layerCho, ET; Lee, HD; Lee, DW; Lee, JI; Jung, SI; Yoon, JJ; Leem, JY; Han, IK
2003-07Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxyHeo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JY; Lee, JI; Jeong, JC
2003-11Fermi-edge enhancement in the luminescence of the AlGaN/GaN heterostructureLee, CM; Ban, SI; Lee, JI; Lee, DH; Leem, JY; Han, IK
2004-12Gate-bias dependence of low-frequency noise in poly-Si thin-film transistorsHan, IK; Lee, JI; Lee, MB; Chang, SK; Kim, EK
2003-03-15Growth of triangular shaped InGaAs/GaAs quantum wire structuresKim, SI; Han, IK; Chung, SW; Jagadish, C
2003-05-29High power broadband InGaAs/GaAs quantum dot superluminescent diodesHeo, DC; Song, JD; Choi, WJ; Lee, JI; Jung, JC; Han, IK
2004-12High power laser diodes/superluminescent diodesHan, IK
2003-07High transfection efficiency of poly(4-vinylimidazole) as a new gene carrierIhm, JE; Han, KO; Han, IK; Ahn, KD; Han, DK; Cho, CS
2000-07High-power broad-band superluminescent diode with low spectral modulation at 1.5-mu m wavelengthSong, JH; Cho, SH; Han, IK; Hu, Y; Heim, PJS; Johnson, FG; Stone, DR; Dagenais, M
2003Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping filmsLee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; Kim, EK
2004-10-15Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxySong, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG
2001-03Light-current characteristics of highly p-doped 1.55 mu m diffraction-limited high-power laser diodesHan, IK; Woo, DH; Kim, SH; Lee, JI; Heo, DC; Jeong, JC; Johnson, FG; Cho, SH; Song, JH; Heim, PJS; Dagenais, M
2001Linearization of quantum well electro-absorption modulator by quantum well intermixing technique for analog optical linksChoi, WJ; Han, IK; Park, YJ; Kim, EK; Lee, JI; Kim, WS; Yi, JC
2001-12Low frequency noise in HEMT structureHan, IK; Lee, JI; Brini, J; Chovet, A
2000-12Low frequency noise spectroscopy for Schottky contactsLee, JI; Han, IK; Heo, DC; Brini, J; Chovet, A; Dimitriadis, CA; Jeong, JC
2003-09Maximum power CW 2.45-W 1.55-mu m InGaAsP laterally tapered laser diodesHeo, DC; Han, IK; Lee, JI; Jeong, JC
1995-01Microwave characteristics of GaAs MESFET with optical illuminationKim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K
1998-08Optical characterization of GaAs/AlAs short period superlatticesWoo, DH; Han, IK; Choi, WJ; Lee, S; Kim, HJ; Lee, JI; Kim, SH; Kang, KN; Choi, SG; Kim, YD; Yoo, SD; Aspnes, DE; Rhee, SJ; Woo, JC
2003-10Optical properties of GaAs/AlGaAs quantum dots grown by droplet epitaxy with post-growth annealingLee, CM; Lee, JI; Lee, DH; Leem, JY; Han, IK; Koguchi, N
2002-11Optical properties of In0.5Ga0.5As/GaAs quantum dots grown by heterogeneous droplet epitaxy with post-growth annealingLee, CM; Noh, SK; Lee, JI; Lee, DH; Leem, JY; Han, IK; Mano, T; Koguchi, N
2002-09Optical properties of InGaN/GaN multiple quantum wellsLee, JI; Lee, CM; Leem, JY; Lim, KS; Han, IK
2004-06-15Optical properties of silicon nanoparticles by ultrasound-induced solution methodLee, S; Cho, WJ; Chin, CS; Han, IK; Choi, WJ; Park, YJ; Song, JD; Lee, JI
2002P-channel MODFET as an optoelectronic detectorKim, HJ; Kim, DM; Han, IK; Choi, WJ; Zimmermann, J; Lee, J
2004-02-09Parametric study on optical properties of digital-alloy In(Ga1-zAlz)As/InP grown by molecular-beam epitaxySong, JD; Heo, DC; Han, IK; Kim, JM; Lee, YT; Park, SH

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