| 1998-03-01 | Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs | Park, YK; Son, CS; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1996-08 | Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array | Kim, TG; Park, JH; Kim, Y; Kim, SI; Son, CS; Kim, MS; Kim, EK; Min, SK |
| 2000-12 | Effects of a Si molecular beam on the formation of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Roh, CH; Hyon, CK; Kim, EK; Yoo, KH |
| 2001-12 | Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots | Park, SK; Park, YJ; Park, YM; Kim, HJ; Kim, EK; Lee, C |
| 2001 | Effects of doping methods on characteristics of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Kim, EK; Son, M; Hwang, S; Yoo, KH |
| 2002-06 | Effects of doping profile on characteristics of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Kim, EK; Son, MH; Hwang, SW; Yoo, KH |
| 2002-03 | Effects of N+-implanted sapphire (0001) substrate on GaN epilayer | Cho, YS; Koh, EK; Park, YJ; Koh, D; Kim, EK; Moon, Y; Leem, SJ; Kim, G; Byun, D |
| 2005-02 | Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots | Kim, JS; Kim, EK; Park, K; Yoon, E; Han, IK; Park, YJ |
| 1998-12 | Effects of rapid thermal annealing on the structural and optical properties of InAs/GaAs self-assembled quantum dots | Cho, S; Hyon, CK; Kim, EK; Min, SK |
| 2001-06 | Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs | Cho, S; Kim, EK |
| 2004-07 | Electrical characterization of InAs/GaAs quantum-dot infrared photodiodes | Park, HK; Kim, EK; Lee, CH; Song, JD; Choi, WJ; Park, YJ; Lee, JI |
| 2004-06 | Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy | Kim, EK; Kim, JS; Hwang, H; Park, K; Yoon, E; Kim, JH; Park, IW; Park, YJ |
| 2004-07 | Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers | Kim, JS; Kim, EK; Hwang, H; Park, K; Yoon, E; Park, IW |
| 2004-10 | Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy | Kim, JS; Kim, EK; Kim, HJ; Yoon, E; Park, IW; Park, YJ |
| 1998-12 | Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices | Choi, BH; Jung, SK; Kim, SI; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1996-12 | Electrical properties of heavily carbon-doped GaAs epilayers grown by atmospheric pressure metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Min, BD; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1997-04 | Electrical properties of rapid thermal annealed carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition | Son, CS; Kim, SI; Kim, TG; Kim, Y; Cho, SH; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 2003-03-03 | Electro-optic characteristics of (001)-oriented Ba0.6Sr0.4TiO3 thin films | Kim, DY; Moon, SE; Kim, EK; Lee, SJ; Choi, JJ; Kim, HE |
| 2001-09-01 | Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation | Lee, H; Kim, SM; Park, YJ; Kim, EK |
| 2002-04 | Ellipsometric study of quasi-monolayer InAs embedded in GaAs at the threshold of quantum-dot formation | Lee, H; Park, YJ; Kim, EK |
| 1999-03-01 | Ellipsometric study of self-assembled InAs/GaAs quantum dots | Lee, H; Seong, E; Kim, SM; Son, MH; Min, BD; Kim, Y; Kim, EK |
| 1998-04-15 | Enhancement of selective chemical vapor deposition of copper by nitrogen plasma pretreatment | Kim, YS; Kim, DJ; Kwak, SK; Kim, EK; Min, SK; Jung, DG |
| 2000-02 | Etching behavior of GaAs/AlGaAs multilayer structure during laser beam scanning | Park, SK; Lee, C; Kim, EK |
| 2000-08-07 | Evaluations of strains in fused layers using patterned substrates | Hwang, SM; Lee, JY; Park, SK; Hyon, CK; Kim, Y; Park, YJ; Kim, EK; Choi, IH |
| 1999-12 | Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots | Jung, SK; Song, SH; Hwang, SW; Park, JH; Kim, Y; Kim, EK |
| 1999-08 | Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots | Jung, SK; Hyon, CK; Park, JH; Hwang, SW; Ahn, D; Son, MH; Min, BD; Kim, Y; Kim, EK |
| 1998-11-23 | Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor | Choi, BH; Hwang, SW; Kim, IG; Shin, HC; Kim, Y; Kim, EK |
| 1998-01-08 | Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition | Kim, TG; Son, CS; Hwang, SM; Kim, EK; Min, SK; Leem, SJ; Park, JH |
| 2000-05 | Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot | Jung, SK; Hwang, SW; Ahn, D; Park, JH; Kim, Y; Kim, EK |
| 1997-03 | Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers | Kim, TG; Hwang, SM; Kim, EK; Min, SK; Jeon, JI; Leem, SJ; Jeong, J; Park, JH |
