| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | Song, JD; Park, YJ; Han, IK; Choi, WJ; Cho, WJ; Lee, JI; Cho, YH; Lee, JY |
| 2005-03-01 | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots | Lim, JG; Park, YJ; Park, YM; Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Kim, TW; Kim, HS; Park, CG |
| 2000-12 | Effects of a Si molecular beam on the formation of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Roh, CH; Hyon, CK; Kim, EK; Yoo, KH |
| 2001-12 | Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots | Park, SK; Park, YJ; Park, YM; Kim, HJ; Kim, EK; Lee, C |
| 2005-01 | Effects of annealing conditions on the crystallization and grain growth of metastable Ge2Sb2Te5 | Park, YJ; Lee, JY; Youm, MS; Kim, YT |
| 2001 | Effects of doping methods on characteristics of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Kim, EK; Son, M; Hwang, S; Yoo, KH |
| 2002-06 | Effects of doping profile on characteristics of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Kim, EK; Son, MH; Hwang, SW; Yoo, KH |
| 2002-03 | Effects of N+-implanted sapphire (0001) substrate on GaN epilayer | Cho, YS; Koh, EK; Park, YJ; Koh, D; Kim, EK; Moon, Y; Leem, SJ; Kim, G; Byun, D |
| 2005-02 | Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots | Kim, JS; Kim, EK; Park, K; Yoon, E; Han, IK; Park, YJ |
| 2005-01 | Effects of Si-doped GaAs layer on optical properties of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Lee, JI; Yoo, KH |
| 2004-08 | Effects of the V/III flux ratio on the Curie temperature of GaMnAs | Koh, D; Chung, KS; Park, JB; Kim, KM; Park, YJ; Han, IK; Lee, JI |
| 2004-01-01 | Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2004-07 | Electrical characterization of InAs/GaAs quantum-dot infrared photodiodes | Park, HK; Kim, EK; Lee, CH; Song, JD; Choi, WJ; Park, YJ; Lee, JI |
| 2004-06 | Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy | Kim, EK; Kim, JS; Hwang, H; Park, K; Yoon, E; Kim, JH; Park, IW; Park, YJ |
| 2004-10 | Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy | Kim, JS; Kim, EK; Kim, HJ; Yoon, E; Park, IW; Park, YJ |
| 2001-05-25 | Electromigration-induced stress interaction between vias and polygranular clusters | Park, YJ; Joo, YC |
| 2002-02-01 | Electromigration-induced via failure assisted by neighboring clusters | Choi, IS; Park, YJ; Joo, YC |
| 2005-03 | Electron-hole separation in InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Song, JD; Lee, JI |
| 2001-09-01 | Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation | Lee, H; Kim, SM; Park, YJ; Kim, EK |
| 2002-04 | Ellipsometric study of quasi-monolayer InAs embedded in GaAs at the threshold of quantum-dot formation | Lee, H; Park, YJ; Kim, EK |
| 2004-09-06 | Enhanced Curie temperature of InMnP : Zn-T-C similar to 300 k | Shon, Y; Jeon, HC; Park, YS; Lee, WC; Lee, SJ; Kim, DY; Kim, HS; Kim, HJ; Kang, TW; Park, YJ; Yoon, CS; Chung, KS |
| 2004-04 | Enhanced optical properties of high-density (> 10(11)/cm(2)) InAs/AlAs quantum dots by hydrogen passivation | Park, SK; Tatebayashi, J; Nakaoka, T; Sato, T; Park, YJ; Arakawa, Y |
| 2005-05 | Estimation of built-in dipole moment in InAs quantum dots | Park, YM; Park, YJ; Song, JD; Lee, JI |
| 2000-08-07 | Evaluations of strains in fused layers using patterned substrates | Hwang, SM; Lee, JY; Park, SK; Hyon, CK; Kim, Y; Park, YJ; Kim, EK; Choi, IH |
| 2004-07-01 | Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices | Son, SH; Cho, KH; Hwang, SW; Kim, KM; Park, YJ; Yu, YS; Ahn, D |
| 2001-05-21 | Fabrication of wirelike InAs quantum dots on 2 degrees-off GaAs (100) substrates by changing the thickness of the InAs layer | Kim, HJ; Park, YJ; Park, YM; Kim, EK; Kim, TW |
| 2004-01-15 | Ferromagnetic behavior of p-type GaN epilayer implanted with Fe+ ions | Shon, Y; Kwon, YH; Park, YS; Yuldashev, SU; Lee, SJ; Park, CS; Chung, KJ; Yoon, SJ; Kim, HJ; Lee, WC; Fu, DJ; Kang, TW; Fan, XJ; Park, YJ; Oh, HT |
| 1998-04 | Formation of GaN micro-crystals by the direct reaction of NH3 with a Ga-melt | Park, YJ; Son, MH; Kim, EK; Min, SK |
| 2000-09 | Formation of high quality GaAs epilayers on InP substrates by using a patterned GaAs fusion layer | Hwang, SM; Choi, IH; Park, YJ; Hyon, CK; Kim, EK; Min, SK |
| 2000-11 | Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate | Hwang, SM; Park, YJ; Nah, J; Kim, EK; Choi, IH |
