| 1999-12 | Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots | Jung, SK; Song, SH; Hwang, SW; Park, JH; Kim, Y; Kim, EK |
| 1999-08 | Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots | Jung, SK; Hyon, CK; Park, JH; Hwang, SW; Ahn, D; Son, MH; Min, BD; Kim, Y; Kim, EK |
| 1998-11-23 | Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor | Choi, BH; Hwang, SW; Kim, IG; Shin, HC; Kim, Y; Kim, EK |
| 1998-01-08 | Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition | Kim, TG; Son, CS; Hwang, SM; Kim, EK; Min, SK; Leem, SJ; Park, JH |
| 2000-05 | Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot | Jung, SK; Hwang, SW; Ahn, D; Park, JH; Kim, Y; Kim, EK |
| 1997-03 | Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers | Kim, TG; Hwang, SM; Kim, EK; Min, SK; Jeon, JI; Leem, SJ; Jeong, J; Park, JH |
| 2001-05-21 | Fabrication of wirelike InAs quantum dots on 2 degrees-off GaAs (100) substrates by changing the thickness of the InAs layer | Kim, HJ; Park, YJ; Park, YM; Kim, EK; Kim, TW |
| 1999-09 | Facet evolution of Al0.5Ga0.5As/GaAs multilayers grown on mesa-patterned GaAs substrate | Kim, HJ; Park, YK; Kim, SI; Kim, EK; Kim, TW |
| 1998-05-25 | Femtosecond four-wave mixing experiments on GaAs quantum wells using two independently tunable lasers | Kim, DS; Sohn, JY; Yahng, JS; Ahn, YH; Yee, KJ; Yee, DS; Jho, YD; Hohng, SC; Kim, DH; Kim, WS; Woo, JC; Meier, T; Koch, SW; Woo, DH; Kim, EK; Kim, SH |
| 1998-04 | Formation of GaN micro-crystals by the direct reaction of NH3 with a Ga-melt | Park, YJ; Son, MH; Kim, EK; Min, SK |
| 2000-09 | Formation of high quality GaAs epilayers on InP substrates by using a patterned GaAs fusion layer | Hwang, SM; Choi, IH; Park, YJ; Hyon, CK; Kim, EK; Min, SK |
| 1999-05-10 | From exciton resonance to frequency mixing in GaAs multiple quantum wells | Ahn, YH; Yahng, JS; Sohn, JY; Yee, KJ; Hohng, SC; Woo, JC; Kim, DS; Meier, T; Koch, SW; Lim, YS; Kim, EK |
| 1999-06 | GaAs AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique | Kim, TG; Son, CS; Kim, EK; Min, SK; Park, JH |
| 1998-11 | GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates | Kim, EK; Kim, TG; Son, CS; Hwang, SM; Kim, Y; Park, YK; Min, SK |
| 2004-12 | Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors | Han, IK; Lee, JI; Lee, MB; Chang, SK; Kim, EK |
| 2000-11 | Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate | Hwang, SM; Park, YJ; Nah, J; Kim, EK; Choi, IH |
| 1997-01 | Growth of highly oriented TiO2 thin films on InP(100) substrates by metalorganic chemical vapor deposition | Kim, EK; Son, MH; Min, SK; Han, YK; Yom, SS |
| 2003-04 | High electro-optic coefficient of Ba0.6Sr0.4TiO3/MgO(001) dielectric thin film | Kim, DY; Moon, SE; Kim, EK; Lee, SJ |
| 2002-06 | Implantation of N ions on sapphire substrate for improvement of GaN epilayer | Cho, YS; Jhin, J; Park, YJ; Cho, S; Koh, EK; Kim, EK; Kim, G; Byun, D; Min, SK |
| 2001 | Implantation of N-ion on sapphire substrate for GaN epilayer | Park, YJ; Cho, YS; Koh, EK; Kim, EK; Kim, GG; Byun, DJ; Min, SK |
| 2002-06 | Improved crystalline quality of GaN by substrate ion beam pretreatment | Cho, YS; Jhin, J; Koh, EK; Park, YJ; Kim, EK; Kim, G; Min, SK; Byun, D |
| 1996-08-12 | Improvement of carrier capture efficiency of short-period GaAs/AlGaAs quantum wire array by a new lithography method | Kim, TG; Kim, EK; Min, SK; Park, JH |
| 2003 | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping films | Lee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; Kim, EK |
| 2001-07 | Influence of growth conditions on the formation and the optical properties of self-assembled InAs quantum dots on (001)GaAs | Nah, J; Park, SH; Kim, KM; Park, YJ; Hyon, CK; Kim, EK |
| 1997-06 | InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved GaAs substrates | Kim, EK; Lee, MS; Kim, SI; Park, YJ; Min, SK; Lee, JY |
| 1997-03 | InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates | Lee, MS; Kim, EK; Kim, SI; Hwang, SM; Kim, CK; Min, SK; Lee, JY |
| 2004-07 | Investigation of detection wavelength in quantum dot infrared photodetector | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Kim, EK |
| 1999-06 | Ionization energies of germanium-doped AlxGa1-xAs epilayers grown on GaAs substrates | Kim, HJ; Park, YK; Kim, SI; Kim, YT; Kim, EK; Moon, S; Kim, TW |
| 1996-10 | Large-area GaAs/AlGaAs quantum wire array grown by metalorganic chemical vapor deposition on a GaAs substrate with submicron gratings | Kim, TG; Hwang, SM; Kim, EK; Min, SK; Park, JH; Park, JH |
| 1997-05 | Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases | Kim, MS; Lee, C; Park, SK; Choi, WC; Kim, EK; Kim, SI; Ahn, BS; Min, SK |
