Browsing bySubjectMolecular beam epitaxy
Showing results 1 to 16 of 16
| Issue Date | Title | Author(s) |
|---|---|---|
| 2003-10 | ALE 방법에 의해 성장된 InAs/GaAs 양자점의 전자 구속 효과 및 광학적 특성 | 김지훈; 박용주; 박영민; 송진동; 신재철; 이정일; 김태환 |
| 2009-05 | Blue luminescent center in undoped ZnO thin films grown by plasma-assisted molecular beam epitaxy | Kim, J.-B.; No, Y.-S.; Byun, D.; Park, D.-H.; Choi, W.-K. |
| 2024-04 | Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene | Lee, Hyobeom; Im, Hayoon; Choi, Byoung Ki; Park, Kyoungree; Chen, Yi; Ruan, Wei; Zhong, Yong; Lee, Ji-Eun; Ryu, Hyejin; Crommie, Michael F.; Shen, Zhi-Xun; Hwang, Choongyu; Mo, Sung-Kwan; Hwang, Jinwoong |
| 2011-09-01 | Dielectric response of AlP by in-situ ellipsometry | Jung, Y. W.; Byun, J. S.; Hwang, S. Y.; Kim, Y. D.; Shin, S. H.; Song, J. D. |
| 2010-03 | Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy | Ryu, S. P.; Cho, N. K.; Lim, J. Y.; Choi, W. J.; Song, J. D.; Lee, J. I.; Lee, Y. T.; Park, C. G. |
| 2012-08-31 | Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs | Lim, Ju Young; Song, Jin Dong; Yang, Hae Suk |
| 2008-11 | Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures | Shin, S. H.; Lim, J. Y.; Song, J. D.; Kim, H. J.; Han, S. H.; Kim, T. G. |
| 2010-07-01 | Enlarged ferromagnetic hysteresis in InMnP:Be epilayers formed by thermal diffusion using MBE-grown Mn/InP:Be bilayers | Shon, Yoon; Lee, Sejoon; Kang, Tae Won; Lee, Youngmin; Lee, Seung-Woong; Song, Jin Dong; Kim, Hyung-Jun; Lee, Jeong Ju; Yoon, Im Taek |
| 2022-04 | Epitaxial growth and optical band gap variation of ultrathin ZnTe films | Kim, Min Jay; Lee, Kyeong Jun; Kim, Hyun Don; Kim, Hyuk Jin; Choi, Byoung Ki; Lee, In Hak; Khim, Yeong Gwang; Heo, Jin Eun; Chang, Seo Hyoung; Choi, Eunjip; Chang, Young Jun |
| 2006-08 | Fabrication of high density CdTe/GaAs nanodot arrays using nanoporous alumina masks | Jung, Mi; Lee, Hong Seok; Park, Hong Lee; Mho, Sun-il |
| 2009-07 | GaAs 기반 1300 nm 파장대역 InAs 양자점 레이저 다이오드의 발진 특성 | 김광웅; 조남기; 송진동; 이정일; 박정호; 이유종; 최원준 |
| 2010-05 | GaAs 기판 위에 성장한 In0.5Ga0.5As/In0.5Al0.5As 다중양자우물의 광학적 특성에 대한 In0.5Al0.5As 버퍼층 성장온도의 영향 | 김희연; 오현지; 안상우; 류미이; 임주영; 신상훈; 김수연; 송진동 |
| 2017-08-31 | Luminescence properties and mechanisms of optical transitions in digital-alloy InGaAlAs | Cho, Il-Wook; Ryu, Mee-Yi; Song, Jin Dong |
| 2023-06 | Metamorphic growth of 0.1 eV InAsSb on InAs/GaAs virtual substrate for LWIR applications | Woo, Seungwan; Yeon, Eungbeom; Chu, Rafael Jumar; Kyhm, Jihoon; Son, Hoki; Jang, Ho Won; Jung, Daehwan; Choi, Won Jun |
| 2021-04-05 | Optical properties of coherent InAs/InGaAs quantum dash-in-a-well for strong 2 mu m emission enabled by ripening process | Chu, Rafael Jumar; Ahn, Dae-Hwan; Ryu, Geunhwan; Choi, Won Jun; Jung, Daehwan |
| 2009-10 | Parametrical Study on the Preparation of an InAs/AlSb 2DEG Structure for Application to a High-mobility Inverted-doping HEMT | Lim, Ju Young; Shin, Sang Hoon; Song, Jin Dong; Choi, Won Jun; Han, Suk Hee; Yang, Hae Suk |
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