Browsing byAuthorKANG KWANG NHAM
Showing results 16 to 45 of 73
| Issue Date | Title | Author(s) |
|---|---|---|
| - | Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure. | 이희택; Choi Won Jun; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원 |
| - | Effect of dielectric-semiconductor capping layer combinations on the dielectric cap quantum well disordering of InGaAs/InGaAsP single quantum well structure | 이희택; Choi Won Jun; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원; 이종창 |
| - | Effect of gain and index nonlinearities on modulation characteristics of a three-section DBR laser. | KANG KWANG NHAM; Lee Seok; W. J. Choi; S. H. Kim; S. S. Choi; Y. Nakano; K. Tada |
| - | Electrical properties of SiNx/InP structure. | KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 권상덕; 최병두; 임한조; Han Il Ki |
| - | Fabrication and characterization of high speed InP-MSM photodetectors. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Choi Won Jun; KPARK KYUNG HYUN |
| - | Fabrication and characterization of homostructure GaAs δ -doped FETs. | KANG KWANG NHAM; Lee Jung Il; KIM YOUN; Han Il Ki; Min Suk-Ki; Y. J. Lee |
| - | Fabrication and dc characterization of submicron gate GaAs MESFET. | KANG KWANG NHAM |
| - | GaAs 기판상에 구성된 방향성 결합기를 이용한 진행파형 광변조기의 해석 . | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성철; Han Il Ki |
| - | GaAs/AlAs 단주기 초격자 구조의 광특성 | Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Seok; Kim Sun Ho; KANG KWANG NHAM |
| - | Gate voltage dependence parasitic resistence in LDD MOSFETs. | KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee; 김동명; Han Il Ki |
| - | Growth and characterization of silicon nitride films by PECVD. | KANG KWANG NHAM; Lee Jung Il; J. H. Jo; Han Il Ki; Y. J. Lee |
| - | High speed optical modulators on III-V semiconductors. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성철 |
| - | Impurity free vacancy disordering and its application to fabricate multiple wavelength on the same wafer | Choi Won Jun; Lee Seok; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; Larry A. Coldren |
| - | Insulating layer grown by PECVD for InP MISFET. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; Han Il Ki; Yoo Jong Lee; LEE MYOUNG BOG; 조준환 |
| - | Measurement of propagation losses and reflective of MQW electroabsorption waveguides using photocurrent. | KANG BYUNG-KWON; 박승한; PARK YOON HO; Byun Young Tae; KIM HWE JONG; Choi Won Jun; Woo Deok Ha; Lee Seok; Kim Sun Ho; KANG KWANG NHAM |
| - | Modeling of fixed type passive elements for ultra-high frequency IC design up to 18GHz. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; 홍성훈; 김봉열 |
| - | Optical controlled AlGaAs/GaAs pseudomorphic MODFET | KIM HWE JONG; 송상호; 김동명; Woo Deok Ha; Lee Seok; Choi Won Jun; Han Il Ki; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 조규만 |
| - | Optical properties of (GaAs)n(AlAs)n superlattices and the Al//0//.//5Ga//0//.//5As random alloy. | CHOI SUKGEUN; KANG KWANG NHAM; 김영동; SEOK JOO YI; 우종천; 유상덕; D. E. Aspnes; Woo Deok Ha; Kim Sun Ho |
| - | Optical responses of Al0.3Ga0.7As/GaAs/In0.13Ga0.87As double heterojunction pseudomorphic MODFET | KIM HWE JONG; 김동명; 정해양; Woo Deok Ha; Choi Won Jun; Lee Seok; Han Il Ki; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM; 조규만 |
| - | Optical studies on a series of AlAs/GaAs short period superlattices | Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Seok; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM; M.S. Oh; Y.D. Kim; S.G. Choi; E.H. Koh; S.J. Rhee; J.C. Woo |
| - | PECVD 방법으로 SiN 박막을 성장함으로써 얻어지는 양자우물 무질서화 및 양자우물의 Al 확산계수의 계산 . | Choi Won Jun; Lee Seok; Jingming Zhang; Lee Jung Il; KIM YOUN; KANG KWANG NHAM; KIM SANG KUK; 조규만 |
| - | Photonic control of DC and microwave characteristics in AlGaAs/GaAs/InGaAs double heterostructure pseudomorphic HEMT's. | KIM HWE JONG; Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; S. J. Kim; D. M. Kim; H. Chung; S. I. Kim; S. H. Kim; K. Cho |
| - | Photonics DC and microwave characteristics of AlGaAs/GaAs/InGaAs pseudomorphic MODFET. | KANG KWANG NHAM; KIM HWE JONG; S. H. Song; D. M. Kim; Han Il Ki; Lee Jung Il; S. H. Kim; S. S. Choi; K. Cho |
| - | Quantum well disordering by using plasma enhanced chemical vapor deposited SiN//x film as a capping layer. | KANG KWANG NHAM; W. J. Choi; S. Lee; Y. Kim; Lee Jung Il; S. K. Kim |
| - | Quantum well disordering of low temperature grown GaAs capped multiple quantum well with SiO//2 capping layer | Choi Won Jun; 한상민; I. Shah; CHOI SUKGEUN; Lee Seok; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM |
| - | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiN//x capping layer for dielectric cap quantum well disordering | Choi Won Jun; 한상민; S.I. Shah; CHOI SUKGEUN; Woo Deok Ha; Lee Seok; KIM HWE JONG; Han Il Ki; Lee Jung Il; KANG KWANG NHAM; 조재원 |
| - | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing Si-rich SiN capping layer for dielectric cap quantum well disordering | Choi Won Jun; KIM HWE JONG; 한상민; Syed ljaz Shah; CHOI SUKGEUN; Lee Seok; Woo Deok Ha; Han Il Ki; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM |
| - | Reduction of saturated transconductance in LDD MOSFETs. | KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee |
| - | RIE 로 처리된 GaAs 표면의 전기적 특성연구 . | Kim Seong Il; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; 조준환; 임한조; Yoo Jong Lee; LEE MYOUNG BOG |
| - | Schottky barrier enhancement of InGaAs with SiNx grown by PECVD. | KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 박홍이; Han Il Ki |
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