Browsing byAuthorKIM EUN KYU

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Showing results 14 to 43 of 116

Issue DateTitleAuthor(s)
-Band-gap narrowing in carbon doped GaAs with various substrate orientations studied by photoluminescence spectroscopyKIM EUN KYU; Min Suk-Ki; S. Cho; D. Lee
-Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor depositionSON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인훈
-Characteristics of GaN micro-crystal formed by the direct reaction of NH//3 with Ga-meltPark Young Ju; 손맹호; KIM EUN KYU; Min Suk-Ki
-Characterization of Mn-center in vertical gradient freeze-GaAs crystals by electron paramagnetic resonance.KIM EUN KYU; Min Suk-Ki; Y. J. Park; I. W. Park; T. H. Yeom
-Computer analysis of heteroface AlGaAs/GaAs solar cell이대욱; Kim Seong Il; KIM HEO JEN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN
-Control of semiconductor nano-structures for quantum devicesKIM EUN KYU; KIM HEO JEN; 김광무; 박영민; Park Young Ju
-Conversion efficiency increase of GaAs solar cell grown on V-grooved GaAs substrate by metalorganc chemical vapor deposition.SON CHANG-SIK; 박만장; MIN BYUNG DON; 황성민; Kim Seong Il; KIM EUN KYU; Min Suk-Ki
-Crystallographic orientation dependence of carbon incorporation into GaAs epilayersSON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈
-Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄SON CHANG-SIK; Kim Seong Il; KIM YOUN; 황성민; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인철
-Defect states in silicon after laser processing.Kim Seong Il; Min Suk-Ki; CHOI WON CHEOL; KIM EUN KYU; CHO HOON YOUNG; KIM CHUN KEUN
-Direct nano-bridging of carbon nanowire using growth barrier: a possible mechanism of selective lateral growth.Yoon-Taek Jang; Chang-Hoon Choi; LEE YUN HI; Chang-Woo Lee; Dong-Ho Kim; Ju Byeong Kwon; KIM EUN KYU; Jae-Eun Lee; Young-Soo Han; Sang-Soo Yoon; Jin-Koog Shin; Sung-Tae Kim
-Direct nano-wiring of carbon nanotube using growth barrierLEE YUN HI; 장윤택; CHOI CHANG HOON; 김동호; 이창우; 이재은; Han Yeongsoo; 윤상수; SHIN Jin-Koog; KIM SUNG TAE; KIM EUN KYU; Ju Byeong Kwon
-Direct transport measurements through an ensemble of if InAs self-assembled quantum dots정석구; 최범호; KIM SEOK IL; 현찬경; MIN BYUNG DON; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU; Min Suk-Ki
-Directional pore arrays on anodic aluminum oxide templateCho Woon Jo; Lee Su Jin; Park Jae Gwan; Park Young Ju; KIM EUN KYU
-Effect of atomic bond structure on crystal orientation dependence of carbon doping in GaAs grown by MOCVDPARK YOUNG KYUN; Kim Seong Il; KIM YOUN; SON CHANG-SIK; KIM EUN KYU; Min Suk-Ki
-Effect of crystallographic orientation on carbon incorporation into GaAs and AlGaAs epilayers grown by metalorganic chemical vapor deposition.SON CHANG-SIK; Kim Seong Il; Min Suk-Ki; KIM EUN KYU; KIM YOUN; 최인훈
-Effect of Si doping on InAs/GaAs quantum dots조광식; 윤석호; 황희돈; 윤의준; 박영민; Park Young Ju; KIM EUN KYU; LIM YOUNG SU; 이정용
-Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots박세기; Park Young Ju; 박영민; KIM HEO JEN; KIM EUN KYU; 이천
-Effects of rapid thermal annealing on electrical properties of CBr//4-doped GaAs epilayers grown by atmospheric pressure MOCVD.SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; Lee Sang Bae; KIM EUN KYU; Min Suk-Ki; 최인훈
-Effects of Si-molecular beam on the formation of InAs quantum dots박영민; Park Young Ju; 김광무; 노정현; 현찬경; KIM EUN KYU; 유근호
-Electrical and optical properties of quantum wire laserJ. C. Jang; Kim Seong Il; 황승민; KIM HEO JEN; SON CHANG-SIK; J. H. Park; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN
-Electrical and structural properties of Si nanocrystals prepared by ion-beam-assisted electron beam depositionK.H. Park; Y. Kim; T.H. Chung; H.J. Bark; J.Y. Yi; CHOI WON CHEOL; KIM EUN KYU
-Electrical properties of carbon-doped GaAs epilayers by atmospheric pressure MOCVD using CBr//4.SON CHANG-SIK; Kim Seong Il; KIM EUN KYU; MIN BYUNG DON; Min Suk-Ki; 최인훈
-Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4.SON CHANG-SIK; 황성민; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki; KIM EUN KYU; KIM YOUN
-Enhancement of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4.KIM EUN KYU; S.I. Kim; M.S. Kim; Y. Kim; S.M. Hwang; B.D. Min; C.S. Son; Min Suk-Ki
-Evaluations of the thin GaN layer grown on (001) GaAs substratePark Young Ju; 고의관; 박일우; C.S. Park; KIM EUN KYU
-Fabrication and characterization of planar resonant tunneling devices incorporating Inas self-assembled quantum dots정석구; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU
-Fabrication and characterization of planar-type resonant tunneling devices incorporating InAs self-assembled quantum dotsKIM EUN KYU; 정석구; 황성우; PARK JEONG HO
-Fabrication of AlGaAs/GaAs heteroface solar cellsKIM HEO JEN; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; 황성민; 김태환
-Fabrication of high-efficiency heteroface AlGaAs/GaAs solar cells grown by MOCVD황성민; Kim Seong Il; 이달진; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM YOUN

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