| - | GaAs/AlGaAs buried channel stripe lasers by single-stage metalorganic chemical vapor deposition on V-grooved substrate | KIM EUN KYU; KIM TAE-GEUN; SON CHANG-SIK; 황성민; Min Suk-Ki |
| - | Growth and characterization of GaAs layer by molecular beam epitaxy. | KIM EUN KYU; Min Suk-Ki; S. W. Lee; H. Y. Cho; H. S. Kim; J. H. Park |
| - | Growth characteristics for the polycrystalline GaN grains | 박종관; Park Young Ju; KIM EUN KYU; 노정현; 심광보 |
| - | Growth interruption dependence of self-assembling behavior of InGaAs quantum dots on exact and misoriented (100) GaAs substrates | KIM YOUN; Min Suk-Ki; KIM EUN KYU; MIN BYUNG DON |
| - | Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Influence of growth conditions on formation and optical properties of self assembled InAs quantum dots on GaAs(001) | NAH JONGBUM; 김광무; Park Young Ju; 현찬경; 노정현; KIM EUN KYU; 박승환 |
| - | Ionization energy of Ge in AlGaAs | KIM HEO JEN; Kim Seong Il; CHOI WON CHEOL; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
| - | Laser direct dry etching for Al//0//.//3Ga//0//.//7As/GaAs multi-layer structure. | Kim Seong Il; Min Suk-Ki; KIM EUN KYU; 박세기; 이천 |
| - | Lateral transport through self-assembled In(Ga)As quantum dots located in the narrow gap (~ 30 nm) between e-beam patterned electrodes | 정석구; MIN BYUNG DON; KIM YOUN; KIM EUN KYU; 현찬경; 황성우; PARK JEONG HO |
| - | Luminescence study of carbon doped GaAs grown on GaAs(311)A substrate by MOCVD | KIM EUN KYU; Min Suk-Ki; S. Cho; D. Lee; SON CHANG-SIK; CHOI WON CHEOL; Kim Seong Il |
| - | Maskless selective epitaxial growth on patterned GaAs substrates by atmospheric pressure MOCVD | SON CHANG-SIK; Kim Seong Il; PARK YOUNG KYUN; 황성민; 한철구; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Microscopic analysis of direct synthesized GaN microcrystals | 박일우; 고의관; PARK CHAN-SOO; Park Young Ju; KIM EUN KYU; 박성수; H.W. Shin; 조성호; 김상식; 성만영 |
| - | Molecular-dynamics study of the vacancy-hydrogen and vacancy-deuterium complexes in silicon. | PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki |
| - | Nano-structural investigation of InAs quantum dots multi-stacked on GaAs (100) substrates | 노정현; 이선우; 심광보; Park Young Ju; 김광무; 박영민; KIM EUN KYU |
| - | Nanometer scale patterning by cantilever-oscillating Atomic Force Microscope (AFM) | 현찬경; 최승철; 황성우; KIM YOUN; KIM EUN KYU |
| - | New technique for application of large-area GaAs/AlGaAs quantum wire arrays to low threshold and high power laser. | KIM EUN KYU; Min Suk-Ki; T. G. Kim; J. H. Park; K. H. Park; S. M. Hwang; C. S. Son; Kim Seong Il; M. S. Kim |
| - | Observation of a universal behavior in the growth of InAs self-assembled quantum dots on patterned substrates | 황성우; 손맹호; 최범호; 안도열; 현찬경; 송상헌; Park Young Ju; KIM EUN KYU |
| - | Observation of single tunneling in directly grown multiwall carbon nanotube bridge between Co electrodes | 장윤택; CHOI CHANG HOON; KIM EUN KYU; Ju Byeong Kwon; LEE YUN HI; 이창우; 김동호 |
| - | One-step selective growth of GaAs on V-groove patterned GaAs substrate using CBr4 and CCl4 | KIM EUN KYU; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; SON CHANG-SIK; 한철구; 황성민; Min Suk-Ki; 최인훈 |
| - | Optical characterization of self-organized InAs quantum dots grown by molecular beam epitaxy | KIM EUN KYU; Min Suk-Ki; S. Cho; C. S. Oh; 한철구 |
| - | Optical study of InAs quantum dots and wetting layer using spectroscopic ellipsometry | 이호선; Park Young Ju; KIM EUN KYU |
| 1998-04 | p-AlGaAs/p-GaAs/n-GaAs 이종접합 태양전지의 구조와 금속전극패턴의 최적화에 관한 분석 | KIM HEO JEN; 이대욱; 김태환; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
| - | Patterned formation of InAs QDs for single electron device applications | 손맹호; 최범호; 황성우; 안도열; 현찬경; KIM EUN KYU; KIM YOUN |
| - | Phtoluminescence spectroscopy of self-assembled InAs quantum dots using a Si-molecular beam | 박영민; Park Young Ju; 김광무; KIM EUN KYU |
| - | Pulsed excimer laser annealing effects of ion implanted silicon on insulator. | Kim Seong Il; Min Suk-Ki; KIM EUN KYU; Kim Yong Tae; KIM CHUN KEUN; KIM MOO SUNG |
| - | Rapid thermal annealing dependence of deep electron traps in GaAs-on-Si grown by MOCVD. | KIM EUN KYU; CHO HOON YOUNG; KIM YOUN; 김현수; Min Suk-Ki; M. S. Kim |
| - | Resistless nanometer patterning of SiO₂ with electron beam irradiation | KIM SEOK IL; 정석구; 최범호; 현찬경; KIM EUN KYU; Min Suk-Ki; 황성우 |
| - | Role of restrained vertical growth in realizing one-step maskless selective epitaxy on patterned GaAs substrate | SON CHANG-SIK; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; 최인훈 |
| - | Selective control of InAs self-assembled quantum dots on GaAs with sub-micron metal patterns | 손맹호; 최범호; 현찬경; KIM EUN KYU; KIM YOUN; 임종수; AHN JIN HO |
| - | Selective epitaxy with in-situ mask processing. | KIM EUN KYU; K. Ozasa; T. Ye; Y. Aoyagi |
