| - | Laser direct dry etching for Al//0//.//3Ga//0//.//7As/GaAs multi-layer structure. | Kim Seong Il; Min Suk-Ki; KIM EUN KYU; 박세기; 이천 |
| - | Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; KANG JOON MO; 황성민; 박양근 |
| - | Lateral growth rate control of GaAs on patterned substrates by CCl//4 and CBr//4 during MOCVD. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; MIN BYUNG DON; Min Suk-Ki |
| - | Lateral growth rate enhancement on patterned GaAs substrates with CCl//4 by MOCVD. | KIM YOUN; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki |
| - | Lateral mode behavior of GaAs/AlGaAs DH laser diode by computer simulation. | Kim Seong Il; Min Suk-Ki |
| - | Luminescence study of carbon doped GaAs grown on GaAs(311)A substrate by MOCVD | KIM EUN KYU; Min Suk-Ki; S. Cho; D. Lee; SON CHANG-SIK; CHOI WON CHEOL; Kim Seong Il |
| - | Maskless selective epitaxial growth on patterned GaAs substrates by atmospheric pressure MOCVD | SON CHANG-SIK; Kim Seong Il; PARK YOUNG KYUN; 황성민; 한철구; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | MOCVD 로 성장시킨 GaAs/AlGaAs DH laser diode 의 발진 특성 및 computer simulation 에 의한 횡모드 거동 . | Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
| - | MOCVD 법을 이용한 AlGaAs/GaAs HEMT 의 제작 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | MOCVD 에 의한 화합물반도체 에피 성장 기술 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | Modeling for GaAs/AlGaAs buried heterostructure laser diode. | Kim Seong Il; EOM KYUNG SOOK; Min Suk-Ki |
| - | Molecular-dynamics study of the vacancy-hydrogen and vacancy-deuterium complexes in silicon. | PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki |
| 1995-01 | New concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface. | Kim Yong Tae; S. K. Kwak; C. S. Kwon; D. J. Kim; C. W. Lee; I. H. Choi; Min Suk-Ki |
| - | New technique for application of large-area GaAs/AlGaAs quantum wire arrays to low threshold and high power laser. | KIM EUN KYU; Min Suk-Ki; T. G. Kim; J. H. Park; K. H. Park; S. M. Hwang; C. S. Son; Kim Seong Il; M. S. Kim |
| 1996-01 | Nitrogen effects of Ta-Si-N diffusion barrier in Si/Cu metallization. | Kim Yong Tae; S. P. Jeong; D. J. Kim; J. W. Park; Min Suk-Ki |
| 1994-01 | Nitrogen implanted tungsten thin films for Cu diffusion barrier. | Kim Yong Tae; D. J. Kim; C. S. Kwon; I. H. Choi; Min Suk-Ki |
| - | One-step selective growth of GaAs on V-groove patterned GaAs substrate using CBr4 and CCl4 | KIM EUN KYU; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; SON CHANG-SIK; 한철구; 황성민; Min Suk-Ki; 최인훈 |
| - | Optical characterization of self-organized InAs quantum dots grown by molecular beam epitaxy | KIM EUN KYU; Min Suk-Ki; S. Cho; C. S. Oh; 한철구 |
| 1998-04 | p-AlGaAs/p-GaAs/n-GaAs 이종접합 태양전지의 구조와 금속전극패턴의 최적화에 관한 분석 | KIM HEO JEN; 이대욱; 김태환; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
| - | Performance of plasma deposited tungsten nitride diffusion barrier for Al and Au metallizations. | Kim Yong Tae; 이창우; Min Suk-Ki |
| 1994-01 | Post annealing characteristics of RF magnetron sputtered PbTiO//3 films. | Kim Yong Tae; H. N. Lee; J. G. Lee; C. S. Kwon; S. H. Choh; Min Suk-Ki |
| - | Pulsed excimer laser annealing effects of ion implanted silicon on insulator. | Kim Seong Il; Min Suk-Ki; KIM EUN KYU; Kim Yong Tae; KIM CHUN KEUN; KIM MOO SUNG |
| - | Rapid thermal annealing dependence of deep electron traps in GaAs-on-Si grown by MOCVD. | KIM EUN KYU; CHO HOON YOUNG; KIM YOUN; 김현수; Min Suk-Ki; M. S. Kim |
| - | Relaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs grown by MOCVD. | SON CHANG-SIK; KANG JOON MO; KIM YOUN; KIM MOO SUNG; Min Suk-Ki |
| - | Relaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs(311)A grown by molecular beam epitaxy(MBE). | SON CHANG-SIK; 전인상; 한철구; 이정훈; JIN HYOUN CHER; KIM MOO SUNG; Min Suk-Ki |
| - | Resistless nanometer patterning of SiO₂ with electron beam irradiation | KIM SEOK IL; 정석구; 최범호; 현찬경; KIM EUN KYU; Min Suk-Ki; 황성우 |
| - | Selective formation of In//xGa//1//-//xAs quantum dots by molecular beam epitaxy | Park Young Ju; 한철구; 김광무; 정석구; KIM EUN KYU; Min Suk-Ki |
| - | Selective formation of InAs quantum dot structure by molecular beam epitaxy | 한철구; 장영준; 오치성; Park Young Ju; KPARK KYUNG HYUN; KIM EUN KYU; Min Suk-Ki; PARK JEONG HO |
| - | Selective growth of InAs quantum dots on pattened Si-SiO₂ substrates | 최범호; Chang-Min Park; 송상헌; 황성우; MIN BYUNG DON; 손맹호; 안도열; Park Young Ju; KIM EUN KYU; Min Suk-Ki |
| - | Simulations of epitaxial growth on patterned GaAs substrates | KIM HEO JEN; Kim Seong Il; SON CHANG-SIK; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
