| 2010-10 | A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 mu m surface emitting laser diodes | Cho, N. K.; Kim, K. W.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2008-06 | Atomic force microscopy and polarized Raman spectroscopy of (GaP)(n)/(InP)(n) short-period supeflattice structures | Lim, Jung-Ran; Rho, Heesuk; Song, J. D.; Choi, W. J.; Lee, Y. T. |
| 2006-08 | Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes | Lim, J. Y.; Nam, H. D.; Song, J. D.; Choi, W. J.; Lee, J. I.; Yang, H. S. |
| 2007-10 | Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots | Arpatzanis, N.; Tassis, D. H.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2013-05-07 | Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer | An, C. S.; Jang, Y. D.; Lee, H.; Lee, D.; Song, J. D.; Choi, W. J. |
| 2010-03 | Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy | Ryu, S. P.; Cho, N. K.; Lim, J. Y.; Choi, W. J.; Song, J. D.; Lee, J. I.; Lee, Y. T.; Park, C. G. |
| 2010-02 | Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate | Lim, J. Y.; Song, J. D.; Choi, W. J.; Yang, H. S. |
| 2014-04 | Effect of Growth Temperature and Quantum Structure on InAs/GaAs Quantum Dot Solar Cell | Park, M. H.; Kim, H. S.; Park, S. J.; Song, J. D.; Kim, S. H.; Lee, Y. J.; Choi, W. J.; Park, J. H. |
| 2007-09-01 | Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures | Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C. |
| 2007-07-15 | Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode | Ryu, S. P.; Lee, Y. T.; Cho, N. K.; Choi, W. J.; Song, J. D.; Lee, J. I.; Kwack, H. S.; Cho, Y. H. |
| 2008-02 | Effects of the well layer on the emission wavelength of InAs/InGaAs dot-in-a-well structure | Kim, J.; Yang, C. J.; Sim, U.; Yoon, E.; Lee, Y.; Choi, W. J. |
| 2014-02-03 | Electronic-state-controlled reset operation in quantum dot resonant-tunneling single-photon detectors | Weng, Q. C.; An, Z. H.; Zhu, Z. Q.; Song, J. D.; Choi, W. J. |
| 2006-12 | Energy harvesting MEMS device based on thin film piezoelectric cantilevers | Choi, W. J.; Jeon, Y.; Jeong, J. -H.; Sood, R.; Kim, S. G. |
| 2006-05 | Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structure | Nam, H. D.; Doyennette, L.; Song, J. D.; Choi, W. J.; Yang, H. S.; Lee, J. I.; Julien, F. H. |
| 2014-04 | Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer | Oh, H. J.; Park, S. J.; Lim, J. Y.; Cho, N. K.; Song, J. D.; Lee, W.; Lee, Y. J.; Myoung, J. M.; Choi, W. J. |
| 2013-04-21 | Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflection | Lee, E. H.; Song, J. D.; Yoon, J. J.; Bae, M. H.; Han, I. K.; Choi, W. J.; Chang, S. K.; Kim, Y. D.; Kim, J. S. |
| 2011-09 | Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots | Lim, J. Y.; Song, J. D.; Choi, W. J.; Ahn, J. P.; Yang, H. S. |
| 2008-12 | Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dots | Arpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2014-11-06 | InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K | Park, M. S.; Jain, V.; Lee, E. H.; Kim, S. H.; Pettersson, H.; Wang, Q.; Song, J. D.; Choi, W. J. |
| 2009-10-19 | Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation | Dasika, V. D.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I.; Goldman, R. S. |
| 2006-10 | Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots | Lee, J. I.; Nam, H. D.; Choi, W. J.; Yu, B. Y.; Song, J. D.; Hong, S. C.; Noh, S. K.; Chovet, A. |
| 2006-09 | Low-frequency noise in high-k gate dielectric nanoscale MOSFETs | Han, I. K.; Nam, H. D.; Choi, W. J.; Lee, J. I.; Szentpali, B.; Chovet, A. |
| 2019-02 | Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques | Kim, Ho Sung; Ryu, G. H.; Ahn, S. Y.; Ryu, H. Y.; Choi, W. J. |
| 2009-07-01 | Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots | Dasika, V. D.; Goldman, R. S.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I. |
| 2007-05 | On the concept of imaging nanoscale vector fields - Response | Lee, K. G.; Kihm, H. W.; Kihm, J. E.; Choi, W. J.; Kim, H.; Ropers, C.; Park, D. J.; Yoon, Y. C.; Choi, S. B.; Woo, D. H.; Kim, J.; Lee, B.; Park, Q. H.; Lienau, Ch.; Kim, D. S. |
| 2006-05 | Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources | Song, J. D.; Choi, W. J.; Lee, J. I.; Kim, J. M.; Chang, K. S.; Lee, Y. T. |
| 2013-07-01 | Optical properties of AlAsxSb1-x alloys determined by in situ ellipsometry | Kim, J. Y.; Yoon, J. J.; Kim, T. J.; Kim, Y. D.; Lee, E. H.; Bae, M. H.; Song, J. D.; Choi, W. J.; Liang, C. -T.; Chang, Y. -C. |
| 2006-06 | Photoluminescence and Raman studies of an ln(x)Ga(1-x)P quantum wire structure fabricated using lateral composition modulation | Lim, Jung-Ran; Rho, Heesuk; Song, J. D.; Choi, W. J.; Kim, J. M.; Lee, Y. T. |
| 2011-08 | Quantum dot-like effect in InGaAs/GaAs quantum well | Abdellatif, M. H.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I. |
| 2009-09 | Raman scattering studies of (GaP)(n)/(InP)(n) (n=1, 1.7, 2) short-period superiattice structures | Rho, H.; Lim, J-R.; Song, J. D.; Choi, W. J.; Lee, Y. T. |
