| 2001 | 1/f noise in semiconductor heterostructure laser diodes | Lee, J; Han, IK; Choi, WJ; Brini, J; Chovet, A |
| 2004 | 1/f noise of GaAs Schottky diodes embedded with self-assembled InAs quantum dots | Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Yu, BY; Pyun, CH; Kim, JH; Song, JI; Chovet, A |
| 2003-02 | Analytic model for photo-response of p-channel MODFET'S | Kim, HJ; Han, I; Choi, WJ; Park, YJ; Cho, WJ; Lee, JI; Kim, DM; Zimmermann, J |
| 2004-12 | Characteristics of 1/f noise in Au/GaAs Schottky diode embedded with self-assembled InAs quantum dots | Song, JD; Choi, WJ; Han, IK; Lee, JI; Kim, JH; Song, JI; Chovet, A |
| 2003-08 | Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots | Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jeong, JC; Han, IK |
| 2005-07 | Characteristics of thermally treated quantum-dot infrared photodetector | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Lee, SW |
| 2003-12-05 | Comment on "Probable Langevin-like director reorientation in an interface-induced disordered SmC*-like state of liquid crystals characterized by frustration between ferro- and antiferroelectricity" | Park, B; Oh, CH; Choi, WJ; Wu, JW; Takezoe, H |
| 2006-03-27 | Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy | Cho, NK; Ryu, SP; Song, JD; Choi, WJ; Lee, JI; Jeon, H |
| 1998-07 | Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiNx capping layer | Choi, WJ; Han, SM; Shah, SI; Choi, SG; Woo, DH; Lee, S; Kim, SH; Lee, JI; Kang, KN; Cho, J |
| 2000-05 | Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers | Yi, HT; Cho, J; Choi, WJ; Woo, DH; Kim, SH; Kang, KN |
| 2004-09 | Dependence of the intermixing in InGaAs/InGaAsP quantum well on capping layers | Choi, WJ; Yi, HT; Lee, JI; Woo, DH |
| 2005-03 | Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H |
| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | Song, JD; Park, YJ; Han, IK; Choi, WJ; Cho, WJ; Lee, JI; Cho, YH; Lee, JY |
| 2005-03-01 | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots | Lim, JG; Park, YJ; Park, YM; Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Kim, TW; Kim, HS; Park, CG |
| 2005-01 | Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution | Hwang, SH; Lee, JI; Song, JD; Choi, WJ; Han, IK; Chang, SK |
| 2004-07 | Electrical characterization of InAs/GaAs quantum-dot infrared photodiodes | Park, HK; Kim, EK; Lee, CH; Song, JD; Choi, WJ; Park, YJ; Lee, JI |
| 2005-12 | Electronic subband structure in InAs-GaAs quantum dots in an asymmetric-well infrared photodetector structure | Nam, H; Song, JD; Choi, WJ; Lee, JI; Yang, H; Kwack, HS; Cho, YH |
| 2003-07 | Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy | Heo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JY; Lee, JI; Jeong, JC |
| 2003-06 | High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels | Choi, CS; Kang, HS; Choi, WY; Kim, HJ; Choi, WJ; Kim, DH; Jang, KC; Seo, KS |
| 2003-05-29 | High power broadband InGaAs/GaAs quantum dot superluminescent diodes | Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jung, JC; Han, IK |
| 2003 | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping films | Lee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; Kim, EK |
| 2006-04-01 | InAs/GaAs quantum dot lasers with dots in an asymmetric InxGa1-xAs quantum well structure | Choi, WJ; Song, JD; Lee, JI; Kim, KC; Kim, TG |
| 2004-10-15 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | Song, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG |
| 2004-07 | Investigation of detection wavelength in quantum dot infrared photodetector | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Kim, EK |
| 2005-06 | Linearization of a multiple quantum well electro-absorption modulator by using quantum well intermixing | Choi, WJ; Yi, JC |
| 2001 | Linearization of quantum well electro-absorption modulator by quantum well intermixing technique for analog optical links | Choi, WJ; Han, IK; Park, YJ; Kim, EK; Lee, JI; Kim, WS; Yi, JC |
| 2005-02 | Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy | Choi, WJ; Song, JD; Hwang, SH; Lee, JI; Kim, JH; Song, JI; Kim, EK; Chovet, A |
| 2004-10-01 | MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells | Song, JD; Choi, WJ; Kim, JM; Chang, KS; Lee, YT |
| 1995-01 | Microwave characteristics of GaAs MESFET with optical illumination | Kim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K |
| 2005 | Optical and electrical characterization of quantum dot infrared photodetector structure treated with hydrogen-plasma | Nam, HD; Song, JD; Choi, WJ; Lee, JI; Yang, HS |
