Browsing byAuthorHan, IK

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Showing results 1 to 30 of 57

Issue DateTitleAuthor(s)
20011/f noise in semiconductor heterostructure laser diodesLee, J; Han, IK; Choi, WJ; Brini, J; Chovet, A
20041/f noise of GaAs Schottky diodes embedded with self-assembled InAs quantum dotsSong, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Yu, BY; Pyun, CH; Kim, JH; Song, JI; Chovet, A
2004-12Abnormal photoluminescence behavior of self-assembled InAs quantum dots with bimodal size distributionLee, CM; Choi, SH; Seo, JC; Lee, JI; Leem, JY; Han, IK
2003-10Auger processes in InGaAs QDs grown by using the droplet methodLee, JI; Han, IK; Koguchi, N; Kuroda, T; Minami, F
2005-02Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrierJung, SI; Yoon, JJ; Park, HJ; Park, YM; Jeon, MH; Leem, JY; Lee, CM; Cho, ET; Lee, JI; Kim, JS; Son, JS; Kim, JS; Lee, DY; Han, IK
2004-12Characteristics of 1/f noise in Au/GaAs Schottky diode embedded with self-assembled InAs quantum dotsSong, JD; Choi, WJ; Han, IK; Lee, JI; Kim, JH; Song, JI; Chovet, A
2003-08Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dotsHeo, DC; Song, JD; Choi, WJ; Lee, JI; Jeong, JC; Han, IK
2003-07CW 0.5-W 1.52-mu m digital alloy AlGaInAs-InP multiple-quantum-well lasersHeo, DC; Song, JD; Han, IK; Lee, JI; Jeong, JC; Kim, JM; Lee, YT
2000-03Dependence of the light-current characteristics of 1.55-mu m broad-area lasers on different p-doping profilesHan, IK; Cho, SH; Heim, PJS; Woo, DH; Kim, SH; Song, JH; Johnson, FG; Dagenais, M
2005-02Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlatticesSong, JD; Park, YJ; Han, IK; Choi, WJ; Cho, WJ; Lee, JI; Cho, YH; Lee, JY
2005-03-01Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dotsLim, JG; Park, YJ; Park, YM; Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Kim, TW; Kim, HS; Park, CG
2005-02Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dotsKim, JS; Kim, EK; Park, K; Yoon, E; Han, IK; Park, YJ
2003-06Effects of the linewidth enhancement factor on filamentation in 1.55 mu m broad-area laser diodesHeo, DC; Han, IK; Lee, JI; Jeong, JC; Cho, SH
2004-08Effects of the V/III flux ratio on the Curie temperature of GaMnAsKoh, D; Chung, KS; Park, JB; Kim, KM; Park, YJ; Han, IK; Lee, JI
2005-01Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distributionHwang, SH; Lee, JI; Song, JD; Choi, WJ; Han, IK; Chang, SK
2005-02Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layerCho, ET; Lee, HD; Lee, DW; Lee, JI; Jung, SI; Yoon, JJ; Leem, JY; Han, IK
2003-07Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxyHeo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JY; Lee, JI; Jeong, JC
2003-11Fermi-edge enhancement in the luminescence of the AlGaN/GaN heterostructureLee, CM; Ban, SI; Lee, JI; Lee, DH; Leem, JY; Han, IK
2004-12Gate-bias dependence of low-frequency noise in poly-Si thin-film transistorsHan, IK; Lee, JI; Lee, MB; Chang, SK; Kim, EK
2003-03-15Growth of triangular shaped InGaAs/GaAs quantum wire structuresKim, SI; Han, IK; Chung, SW; Jagadish, C
2003-05-29High power broadband InGaAs/GaAs quantum dot superluminescent diodesHeo, DC; Song, JD; Choi, WJ; Lee, JI; Jung, JC; Han, IK
2004-12High power laser diodes/superluminescent diodesHan, IK
2003-07High transfection efficiency of poly(4-vinylimidazole) as a new gene carrierIhm, JE; Han, KO; Han, IK; Ahn, KD; Han, DK; Cho, CS
2000-07High-power broad-band superluminescent diode with low spectral modulation at 1.5-mu m wavelengthSong, JH; Cho, SH; Han, IK; Hu, Y; Heim, PJS; Johnson, FG; Stone, DR; Dagenais, M
2003Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping filmsLee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; Kim, EK
2004-10-15Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxySong, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG
2001-03Light-current characteristics of highly p-doped 1.55 mu m diffraction-limited high-power laser diodesHan, IK; Woo, DH; Kim, SH; Lee, JI; Heo, DC; Jeong, JC; Johnson, FG; Cho, SH; Song, JH; Heim, PJS; Dagenais, M
2001Linearization of quantum well electro-absorption modulator by quantum well intermixing technique for analog optical linksChoi, WJ; Han, IK; Park, YJ; Kim, EK; Lee, JI; Kim, WS; Yi, JC
2001-12Low frequency noise in HEMT structureHan, IK; Lee, JI; Brini, J; Chovet, A
2000-12Low frequency noise spectroscopy for Schottky contactsLee, JI; Han, IK; Heo, DC; Brini, J; Chovet, A; Dimitriadis, CA; Jeong, JC