| 2001 | 1/f noise in semiconductor heterostructure laser diodes | Lee, J; Han, IK; Choi, WJ; Brini, J; Chovet, A |
| 2004 | 1/f noise of GaAs Schottky diodes embedded with self-assembled InAs quantum dots | Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Yu, BY; Pyun, CH; Kim, JH; Song, JI; Chovet, A |
| 2004-12 | Abnormal photoluminescence behavior of self-assembled InAs quantum dots with bimodal size distribution | Lee, CM; Choi, SH; Seo, JC; Lee, JI; Leem, JY; Han, IK |
| 2003-10 | Auger processes in InGaAs QDs grown by using the droplet method | Lee, JI; Han, IK; Koguchi, N; Kuroda, T; Minami, F |
| 2005-02 | Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier | Jung, SI; Yoon, JJ; Park, HJ; Park, YM; Jeon, MH; Leem, JY; Lee, CM; Cho, ET; Lee, JI; Kim, JS; Son, JS; Kim, JS; Lee, DY; Han, IK |
| 2004-12 | Characteristics of 1/f noise in Au/GaAs Schottky diode embedded with self-assembled InAs quantum dots | Song, JD; Choi, WJ; Han, IK; Lee, JI; Kim, JH; Song, JI; Chovet, A |
| 2003-08 | Characteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots | Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jeong, JC; Han, IK |
| 2003-07 | CW 0.5-W 1.52-mu m digital alloy AlGaInAs-InP multiple-quantum-well lasers | Heo, DC; Song, JD; Han, IK; Lee, JI; Jeong, JC; Kim, JM; Lee, YT |
| 2000-03 | Dependence of the light-current characteristics of 1.55-mu m broad-area lasers on different p-doping profiles | Han, IK; Cho, SH; Heim, PJS; Woo, DH; Kim, SH; Song, JH; Johnson, FG; Dagenais, M |
| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | Song, JD; Park, YJ; Han, IK; Choi, WJ; Cho, WJ; Lee, JI; Cho, YH; Lee, JY |
| 2005-03-01 | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots | Lim, JG; Park, YJ; Park, YM; Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Kim, TW; Kim, HS; Park, CG |
| 2005-02 | Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots | Kim, JS; Kim, EK; Park, K; Yoon, E; Han, IK; Park, YJ |
| 2003-06 | Effects of the linewidth enhancement factor on filamentation in 1.55 mu m broad-area laser diodes | Heo, DC; Han, IK; Lee, JI; Jeong, JC; Cho, SH |
| 2004-08 | Effects of the V/III flux ratio on the Curie temperature of GaMnAs | Koh, D; Chung, KS; Park, JB; Kim, KM; Park, YJ; Han, IK; Lee, JI |
| 2005-01 | Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution | Hwang, SH; Lee, JI; Song, JD; Choi, WJ; Han, IK; Chang, SK |
| 2005-02 | Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer | Cho, ET; Lee, HD; Lee, DW; Lee, JI; Jung, SI; Yoon, JJ; Leem, JY; Han, IK |
| 2003-07 | Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy | Heo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JY; Lee, JI; Jeong, JC |
| 2003-11 | Fermi-edge enhancement in the luminescence of the AlGaN/GaN heterostructure | Lee, CM; Ban, SI; Lee, JI; Lee, DH; Leem, JY; Han, IK |
| 2004-12 | Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors | Han, IK; Lee, JI; Lee, MB; Chang, SK; Kim, EK |
| 2003-03-15 | Growth of triangular shaped InGaAs/GaAs quantum wire structures | Kim, SI; Han, IK; Chung, SW; Jagadish, C |
| 2003-05-29 | High power broadband InGaAs/GaAs quantum dot superluminescent diodes | Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jung, JC; Han, IK |
| 2004-12 | High power laser diodes/superluminescent diodes | Han, IK |
| 2003-07 | High transfection efficiency of poly(4-vinylimidazole) as a new gene carrier | Ihm, JE; Han, KO; Han, IK; Ahn, KD; Han, DK; Cho, CS |
| 2000-07 | High-power broad-band superluminescent diode with low spectral modulation at 1.5-mu m wavelength | Song, JH; Cho, SH; Han, IK; Hu, Y; Heim, PJS; Johnson, FG; Stone, DR; Dagenais, M |
| 2003 | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping films | Lee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; Kim, EK |
| 2004-10-15 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | Song, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG |
| 2001-03 | Light-current characteristics of highly p-doped 1.55 mu m diffraction-limited high-power laser diodes | Han, IK; Woo, DH; Kim, SH; Lee, JI; Heo, DC; Jeong, JC; Johnson, FG; Cho, SH; Song, JH; Heim, PJS; Dagenais, M |
| 2001 | Linearization of quantum well electro-absorption modulator by quantum well intermixing technique for analog optical links | Choi, WJ; Han, IK; Park, YJ; Kim, EK; Lee, JI; Kim, WS; Yi, JC |
| 2001-12 | Low frequency noise in HEMT structure | Han, IK; Lee, JI; Brini, J; Chovet, A |
| 2000-12 | Low frequency noise spectroscopy for Schottky contacts | Lee, JI; Han, IK; Heo, DC; Brini, J; Chovet, A; Dimitriadis, CA; Jeong, JC |
