Browsing byAuthorHan Il Ki
Showing results 1 to 30 of 78
| Issue Date | Title | Author(s) |
|---|---|---|
| - | 1.5 ㎛ tapered semiconductor lasers with low-alpha structure | Peter J.S. Heim; S.H. Cho; M. Dagenais; Han Il Ki |
| - | 1/f noise in schottky barrier structure | Lee Jung Il; Han Il Ki; KIM HWE JONG; 김동명; J. Brini; A. Chovert; C. A. Dimitriadis |
| - | A study on the instability in PECVD-SiNx/InP structure utilizing capacatance and conductnace techniques. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; LEE MYOUNG BOG |
| - | A variation of DC and microwave characteristics in pseudomorphic HEMT's under optical illumination. | KANG KWANG NHAM; KIM HWE JONG; D. H. Woo; S. J. Kim; D. M. Kim; H. Chung; Lee Seok; Han Il Ki; W. J. Choi; S. H. Kim; Lee Jung Il; K. Cho |
| - | Active and passive element modeling for MMIC, talking process conditions into account. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Kim Seong Il; S. H. Hong |
| - | Analytic model for photo-response of p-channel MODFET's | KIM HWE JONG; Han Il Ki; Choi Won Jun; Park Young Ju; Cho Woon Jo; 김동명; Jacques Zimmermann; Lee, Jung Il |
| - | Analytic model for the gate current of MODFET's with and without photonic control | 김희종; 김동명; Han Il Ki; Choi Won Jun; Jacques Zimmermann; Lee Jung Il |
| 1992-01 | Auger electron spectroscopy analysis of Au/Ti/TiNxGaAs structure. | KANG KWANG NHAM; Lee Jung Il; HAN SEUNG HEE; CHOI BYEONJ JIN; V. Bosy; Han Il Ki |
| - | Characteristics of 1.55 ㎛ diffraction-limited high-power LD with different p-doping profiles | Han Il Ki; 조시형; Woo Deok Ha; Kim Sun Ho; Lee Jung Il; F.G. Johnson; M. Dagenais |
| - | Characteristics of semiconductor optical amplifier coated by double-layer antireflection | Lee Seok; 조용상; Woo Deok Ha; KIM HWE JONG; Han Il Ki; KPARK KYUNG HYUN; Kim Sun Ho; KANG KWANG NHAM; Jungkeun Lee; Takeshi Kamiya |
| - | Charge trapping instabilities in SiO2/InP MIS structures. | KANG KWANG NHAM; Lee Jung Il; 최병두; KIM CHOONG HWAN; 임한조; Han Il Ki |
| - | Correlation between threshold voltage shift and gate current change in MODFET's under optical illumination | KIM HWE JONG; 김동명; Han Il Ki; Choi Won Jun; Lee Jung Il |
| - | Dielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2. | KANG KWANG NHAM; KIM HWE JONG; W. J. Choi; Lee Seok; D. Woo; Han Il Ki; S. K. Kim; S. H. Kim; Lee Jung Il |
| - | Effect of linewidth enhancement factor in the 1.55-㎛ MQW high-power laser diodes | Han Il Ki; Si Hyung Cho; Lee Jung Il |
| - | Electrical properties of SiNx/InP structure. | KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 권상덕; 최병두; 임한조; Han Il Ki |
| - | Enhancement of optical properties of InGaAs/GaAs self-assembled quantum dots by thermal annealing with a SiNx/SiO ₂ capping layer | J.H. Lee; Choi Won Jun; Park Young Ju; Han Il Ki; Lee Jung Il; Cho Woon Jo; E.K. Kim; C.M. Lee; H.-W. Kim |
| - | Fabrication and characterization of high speed InP-MSM photodetectors. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Choi Won Jun; KPARK KYUNG HYUN |
| - | Fabrication and characterization of homostructure GaAs δ -doped FETs. | KANG KWANG NHAM; Lee Jung Il; KIM YOUN; Han Il Ki; Min Suk-Ki; Y. J. Lee |
| 1996-06 | Formation of a thin nitrided GaAs layer. | Park Young Ju; KIM EUN KYU; Min Suk-Ki; Kim Seong Il; Han Il Ki; P. O'Keeffe; H. Mutoh; S. Hirose; K. Hara; H. Munekata; H. Kukimoto |
| - | Formation of Ni/Pt/Au ohmic contacts to GaN | 장자순; 김효근; 박성주; KPARK KYUNG HYUN; 엄창섭; Han Il Ki; Kim Sun Ho; Hong Kyu Jang |
| - | GaAs 기판상에 구성된 방향성 결합기를 이용한 진행파형 광변조기의 해석 . | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성철; Han Il Ki |
| - | GaAs/AlAs 단주기 초격자 구조의 광특성 | Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Seok; Kim Sun Ho; KANG KWANG NHAM |
| - | Gate voltage dependence parasitic resistence in LDD MOSFETs. | KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee; 김동명; Han Il Ki |
| - | Growth and characterization of silicon nitride films by PECVD. | KANG KWANG NHAM; Lee Jung Il; J. H. Jo; Han Il Ki; Y. J. Lee |
| - | High-power 1.5㎛ superluminescent diodes | S.H. Cho; Han Il Ki; Y. Hu; J.H. Song; P.J.S. Heim; M. Dagenais; F.G. Johnson; D.R. Stone |
| - | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO ₂ and SiNx capping films. | J.H. Lee; Choi Won Jun; Park Young Ju; Han Il Ki; Cho Woon Jo; Lee Jung Il; E.K. Kim |
| - | Insulating layer grown by PECVD for InP MISFET. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; Han Il Ki; Yoo Jong Lee; LEE MYOUNG BOG; 조준환 |
| - | Low frequency excess noise modeling in semiconductor heterostructure devices | Han Il Ki; Choi Won Jun; 장브리니; 알렌쇼베; Lee Jung Il |
| - | Low frequency noise in gate current of HEMT structures | Lee Jung Il; Han Il Ki; J. Brini; A. Chovet |
| - | Low frequency noise in HEMT structure | Han Il Ki; Lee Jung Il; J. Brini; A. Chovet |
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