| 1989-10-01 | A RELATION BETWEEN EL2 (EC-0.81 EV) AND EL6 (EC-0.35 EV) IN ANNEALED HB-GAAS BY HYDROGEN PLASMA EXPOSURE | CHO, HY; KIM, EK; MIN, SK |
| 1995-09 | APPLICATION OF AN AXIAL MAGNETIC-FIELD TO VERTICAL GRADIENT FREEZE GSAS SINGLE-CRYSTAL GROWTH | PARK, YJ; MIN, SK; HAHN, SH; YOON, JK |
| 1994-08 | CARBON DOPING CHARACTERISTICS OF GAAS AND AL0.3GA0.7AS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING CCL4 | KIM, SI; KIM, Y; KIM, MS; KIM, CK; MIN, SK; LEE, C |
| 1993-01 | CHARACTERISTICS OF HEAVILY CARBON-DOPED GAAS BY LPMOCVD AND CRITICAL LAYER THICKNESS | KIM, SI; EOM, KS; KIM, Y; KIM, MS; MIN, SK; LEE, C; KWAK, MH; MA, DS |
| 1992-09-07 | CHARACTERISTICS OF PLASMA DEPOSITED TUNGSTEN SCHOTTKY CONTACTS TO GAAS | KIM, YT; LEE, CW; HAN, CW; HONG, JS; MIN, SK |
| 1993-06-21 | CHARACTERISTICS OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED TUNGSTEN NITRIDE THIN-FILMS | LEE, CW; KIM, YT; MIN, SK |
| 1988-09-05 | CREATION OF DEEP LEVELS IN HORIZONTAL BRIDGMAN-GROWN GAAS BY HYDROGENATION | CHO, HY; KIM, EK; MIN, SK; KIM, JB; JANG, J |
| 1995-02-01 | CROSS-SECTIONAL OBSERVATION OF NACLO STAIN-ETCHED AL0.5GA0.5AS/GAAS MULTILAYER BY ATOMIC-FORCE MICROSCOPY | KIM, HJ; KIM, JS; KIM, Y; KIM, MS; MIN, SK |
| 1990-03-01 | DEEP ELECTRON TRAPS IN GAAS-LAYERS GROWN ON (100)SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, EK; CHO, HY; KIM, Y; KIM, MS; KIM, HS; MIN, SK; YOON, JH; CHOH, SH |
| 1990-02-19 | DEEP LEVELS IN GAAS GROWN ON SI DURING RAPID THERMAL ANNEALING | CHO, HY; KIM, EK; KIM, Y; MIN, SK; YOON, JH; CHOH, SH |
| 1991-07-15 | DEEP LEVELS IN SI-COIMPLANTED AND BE-COIMPLANTED GAAS | CHO, HY; KIM, EK; MIN, SK |
| 1991-02 | DEEP LEVELS IN SI-IMPLANTED AND RAPID THERMAL ANNEALED SEMI-INSULATING GAAS | LEE, HS; CHO, HY; KIM, EK; MIN, SK; KANG, TW; HONG, CY |
| 1990-08-15 | DEEP LEVELS IN UNDOPED BULK INP AFTER RAPID THERMAL ANNEALING | KIM, EK; CHO, HY; YOON, JH; MIN, SK; JUNG, YL; LEE, WH |
| 1992-10 | DIFFUSION LIMITING MECHANISM IN SI-DELTA DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; MIN, SK; KIM, TW |
| 1991-02 | DISLOCATION-ACCELERATED DIFFUSION OF SI IN DELTA-DOPED GAAS GROWN ON SILICON SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; KIM, MS; MIN, SK; LEE, CC |
| 1995-12 | EFFECTS OF AN AXIAL MAGNETIC-FIELD ON THE GROWTH INTERFACES IN VERTICAL GRADIENT FREEZE GAAS CRYSTAL-GROWTH | PARK, YJ; KIM, EK; SON, MH; MIN, SK |
| 1991-05-15 | EFFECTS OF ELECTRON DEEP TRAPS ON GENERATION LIFETIME IN DENUDED ZONE OF N-TYPE SI WAFER | KIM, HS; KIM, EK; MIN, SK |
| 1990-02-01 | EFFECTS OF LEAKAGE CURRENT ON ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY SIGNALS FOR MIDGAP LEVELS IN GAAS | KIM, EK; CHO, HY; MIN, SK; CHOH, SH; NAMBA, S |
| 1992-12 | ELECTRIC SUBBANDS IN SI-DELTA-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, TW; KIM, Y; KIM, MS; KIM, EK; MIN, SK |
| 1990-11 | ELECTRIC-FIELD-ENHANCED DISSOCIATION OF THE HYDROGEN-SI DONOR COMPLEX IN GAAS | CHO, HY; KIM, EK; MIN, SK; CHANG, KJ; LEE, CC |
| 1993-08 | ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GAAS | KIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, CC |
| 1993-11 | EXPERIMENTAL AND THEORETICAL PHOTOLUMINESCENCE STUDY OF HEAVILY CARBON-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, SI; KIM, MS; MIN, SK; LEE, CC |
| 1995-11 | FACET EVOLUTION OF CCL4-DOPED AL0.5GA0.5AS/GAAS MULTILAYERS DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON PATTERNED GAAS SUBSTRATES | KIM, Y; PARK, YK; KIM, MS; KANG, JM; KIM, SI; HWANG, SM; MIN, SK |
| 1990-08 | GROWTH AND CHARACTERIZATION OF GAAS-IN BY A NEW HORIZONTAL ZONE MELT TECHNIQUE | PARK, YJ; HAN, CW; SHIM, KB; PARK, SC; KIM, CB; MIN, SK |
| 1995-01 | GROWTH-BEHAVIOR ON V-GROOVED HIGH MILLER INDEX GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, MS; KIM, Y; LEE, MS; PARK, YJ; KIM, SI; MIN, SK |
| 1993-12 | HALL-MOBILITY AND TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE OF CARBON-DOPED GAAS | KIM, SI; KIM, Y; LEE, MS; KIM, MS; MIN, SK; LEE, CC |
| 1995-01 | IN-SITU PATTERN ETCHING OF GAAS BY TRIMETHYLINDIUM AND H2O2 GASES WITH ELECTRON-BEAM-INDUCED RESIST | KIM, EK; MIN, SK; OZASA, K; AOYAGI, Y |
| 1993-05-01 | LOW-TEMPERATURE PHOTOLUMINESCENCE CHARACTERISTICS OF CARBON-DOPED GAAS | KIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, C |
| 1995-01-01 | MAGNETOTRANSPORT AND ELECTRIC SUBBAND STUDIES OF SI-DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, TW; KIM, Y; MIN, SK |
| 1994-09-01 | MAGNETOTRANSPORT AND ELECTRON SUBBAND STUDIES OF EDGE DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS | KIM, TW; YOO, KH; LEE, KS; KIM, Y; MIN, SK; YOM, SS; LEE, SJ |
