| 2004-12 | Characteristics of vanadium-tungsten-oxide bolometric thin films for uncooled IR detectors | Han, YH; Choi, IH; Moon, S; Son, CS |
| 1999-07 | Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy | Kim, JW; Son, CS; Choi, IH; Park, YK; Kim, YT; Ambacher, O; Stutzmann, M |
| 1996-08-05 | Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates | Kim, SI; Kim, MS; Kim, Y; Son, CS; Hwang, SM; Min, BD; Kim, EK; Min, SK |
| 2002-12 | Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD | Son, CS; Cho, S; Choi, IH; Kim, SI; Kim, YT; Chung, SW |
| 1997-08-01 | Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Kim, Y; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 2004-12 | Deposition-temperature dependence of ZnO/Si grown by pulsed laser deposition | Son, CS; Kim, SM; Kim, YH; Kim, SI; Kim, YT; Yoon, KH; Choi, IH; Lopez, HC |
| 1998-03-01 | Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs | Park, YK; Son, CS; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1996-08 | Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array | Kim, TG; Park, JH; Kim, Y; Kim, SI; Son, CS; Kim, MS; Kim, EK; Min, SK |
| 1996-05 | Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs | Son, CS; Kim, SI; Kim, TG; Kim, Y; Kim, MS; Min, SK |
| 1996-12 | Electrical properties of heavily carbon-doped GaAs epilayers grown by atmospheric pressure metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Min, BD; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1997-04 | Electrical properties of rapid thermal annealed carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition | Son, CS; Kim, SI; Kim, TG; Kim, Y; Cho, SH; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 2004-11 | Enhancement of electrical properties of Pt/SrBi2Nb2O9/Pt structures by remote oxygen plasma annealing | Kim, IS; Kim, YM; Choi, IH; Kim, SI; Kim, YH; Yoo, DC; Lee, JY; Son, CS |
| 1999-06 | Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition | Park, YK; Kim, SI; Son, CS |
| 2004-12 | Fabrication of a surface micromachined uncooled microbolometer based on the V2O5/V/V2O5 sandwich structure | Han, YH; Choi, IH; Son, CS; Kim, KT; Anh, NC; Shin, HJ; Moon, S |
| 1998-01-08 | Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition | Kim, TG; Son, CS; Hwang, SM; Kim, EK; Min, SK; Leem, SJ; Park, JH |
| 1999-06 | GaAs AlGaAs buried channel stripe lasers fabricated by a single-stage selective epitaxial growth technique | Kim, TG; Son, CS; Kim, EK; Min, SK; Park, JH |
| 1998-11 | GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates | Kim, EK; Kim, TG; Son, CS; Hwang, SM; Kim, Y; Park, YK; Min, SK |
| 2003-06 | Growth and characterization of triangular InGaAs/GaAs quantum wire structures grown by low-pressure metalorganic chemical vapor deposition | Kim, SI; Son, CS; Kim, YH; Kim, YT |
| 2003-08 | Growth and characterization of triangular-shaped AlGaAs/GaAs and InGaAs/GaAs quantum wire structures | Kim, S; Kim, YH; Lee, YJ; Son, CS |
| 1997-01 | Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD | Kim, SI; Kim, MS; Kim, Y; Hwang, SM; Min, BD; Son, CS; Kim, EK; Min, SK |
| 1998-04 | Maskless selective epitaxial growth on patterned GaAs substrates by metalorganic chemical vapor deposition | Son, CS; Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1998-01 | One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 | Kim, EK; Kim, TG; Son, CS; Kim, SI; Park, YK; Kim, Y; Min, SK; Choi, IH |
| 2004-10 | Optical properties of ZnO nanocrystals synthesized by using sol-gel method | Chang, HJ; Lu, CZ; Wang, YS; Son, CS; Kim, SI; Kim, YH; Choi, IH |
| 2004-10 | Photoluminescence of Er-implanted GaN | Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC |
| 2004-12 | Preparation and characterization of field effect transistor with (Bi,La)Ti3O12 ferroelectric gate material | Chang, HJ; Suh, KM; Park, JH; Gong, SC; Shim, SI; Kim, YT; Son, CS |
| 1996-08 | Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4 | Son, CS; Kim, SI; Kim, Y; Lee, MS; Kim, MS; Min, SK; Choi, IH |
| 2004-12 | Red emission from Eu-implanted GaN | Son, CS; Kim, SI; Kim, YH; Kim, YT; Choi, IH; Wakahara, A; Tanoue, H; Ogura, M |
| 1998-05 | Selective epitaxy of carbon-tetrachloride-doped GaAs grown by metalorganic chemical vapor deposition | Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Son, CS; Choi, IH |
| 2000-01 | Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy | Kim, JW; Son, CS; Choi, IH; PARK, YOUNG KYUN; Kim, Yong Tae; Ambacher, O; Stutzmann, M |
| 1997-11-21 | Temperature-dependent Hall analysis of carbon-doped GaAs | Kim, SI; Son, CS; Chung, SW; Park, YK; Kim, EK; Min, SK |
