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Showing results 1 to 9 of 9

Issue Date	Title	Author(s)
-	A Study on the Temperature Dependence of the Threshold Switching Characteristics of Ge2Sb2Te5	Lee Suyoun; Jeong, Doo Seok; Jeung-hyun Jeong; Wu Zhe; Park Young-wook; Hyung-Woo Ahn; CHEONG, BYUNG KI
-	Characteristics of phase change memory devices based on Ge-doped SbTe and its derivative	CHEONG, BYUNG KI; Jeung-hyun Jeong; Lee Suyoun; Kim Inho; Wu Zhe; Ahn Hyoung Woo; Kim Seul-Cham; LEE HYUN SUCK; Park Young-wook
-	Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming	Lee Suyoun; Jeung-hyun Jeong; Park Young-wook; Wu Zhe; LEE, TAEK SUNG; CHEONG, BYUNG KI
-	Demonstration of a high-speed multi-level cell phase-change memory using Ge-doped SbTe	Zang Gang; Wu Zhe; Park Young Wook; Jeung-hyun Jeong; Jeong, Doo Seok; Yoo, Won Jong; CHEONG, BYUNG KI
-	Device Characteristics of Ge-doped SbTe Material System for Phase Change Random Access Memory	Jeung-hyun Jeong; Lee Suyoun; Wu Zhe; LEE, TAEK SUNG; KIM, WON MOK; Kim Seul-Cham; Kyu Hwan Oh; CHEONG, BYUNG KI
-	Improved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTe	Wu Zhe; Park Young Wook; Hyung-Woo Ahn; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kwangsoo No; CHEONG, BYUNG KI
-	Material and Device Characteristics of Ge-doped SbTe-N Phase Change Memory Material	Wu Zhe; Lee Suyoun; Jeung-hyun Jeong; Kim Inho; Kim Seul-Cham; Kyu Hwan Oh; CHEONG, BYUNG KI
-	Phase Change Material for Potential Use in High density Non-volatile Memory	CHEONG, BYUNG KI; Kim Inho; Jeung-hyun Jeong; Wu Zhe; LEE, TAEK SUNG; KIM, WON MOK; Dae-Hwan Kang; Hee-Suk Chung; Kim Seul-Cham; Kyu Hwan Oh
-	The Effect of Ge Addition on the Operation Characteristics of a Phase-change Memory(PCM) Device Using Ge-doped SbTe	Park Young-wook; Lee Hyun Seok; Hyung-Woo Ahn; Wu Zhe; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kyung-woo Yi; CHEONG, BYUNG KI

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