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SOLID-PHASE EPITAXIAL REGROWTH AND DOPANT ACTIVATION OF P-IMPLANTED METASTABLE PSEUDOMORPHIC GE0.12SI0.88 ON SI(100)

Authors

LIE, DYC; THEODORE, ND; SONG, JH; NICOLET, MA

Issue Date

1995-05-15

Publisher

AMER INST PHYSICS

Citation

JOURNAL OF APPLIED PHYSICS, v.77, no.10, pp.5160 - 5166

Keywords

SI1-XGEX ALLOY LAYERS; ION-IMPLANTATION; DAMAGE PRODUCTION; SI; SILICON; STRAIN; SUPERLATTICES; KINETICS; STRESS; FILMS; SI1-XGEX ALLOY LAYERS; ION-IMPLANTATION; DAMAGE PRODUCTION; SI; SILICON; STRAIN; SUPERLATTICES; KINETICS; STRESS; FILMS

ISSN

0021-8979

URI

https://pubs.kist.re.kr/handle/201004/145080

DOI

10.1063/1.359261

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KIST Article > Others

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