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Showing results 1 to 30 of 204

Issue DateTitleAuthor(s)
1996-01100 ㎚ electron beam lithography using a modified scanning electron microscope.김성일; 민석기; 김은규; 최범호; 황성우; 정석구; 김태근
1988-07(100) 실리콘 기판위에 MOCVD 법으로 성장된 GaAs 에피층의 결정구조 특성 .김용; 김무성; 김현수; 민석기
1996-01A formation of carbon micro-pattern by laser-induced deposition with CCl//2F//2 gas.김성일; 민석기; 김은규; 박세기; 이천
1991-01A new method to suppress encroachment by plasma deposited tungsten thin films.김용태; 민석기; 김충기
1988-01A study on the nucleation, growth and shrinkage of oxidation induced stacking faults(OSF), part I: nucleation and thermal behavior of oxidation induced stacking faults.김용태; 김춘근; 민석기
1988-01A stydy on the necleation, growth and shrinkage of oxidation induced stacking faults(OSF);-part II : Role of SiO//2 layer on the shrinkage of oxidation induced stacking faults(OSF) in P-type CZ silico김용태; 민석기
1988-05Abnormal behavior of midgap electron trap in HB-GaAs during thermal annealing.김은규; 민석기; 조훈영
1994-01Annealing effects on the properties of TiW/WNx bilayer.김용태; D. J. Kim; C. S. Kwon; J. W. Park; 민석기
1988-10Anomalous conduction band density of state in AlGaAs alloys.김용; 김무성; 민석기
1994-01Atomic force microcopy를 이용한 Al0.5Ga0.5As/GaAs 다층 에피층구조의 단면관찰에 관한 연구김용; 김희진; 김재성; 김무성; 민석기
1992-07Behavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric MOCVD.김용; 김태환; 김무성; 민석기
1989-08Behaviour of transition metal tungsten in bulk GaAs crystal박용주; 한철원; 심광보; 박승철; 민석기
1996-07CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈
1997-08-08CBr4개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법민석기; 김성일; 김무성
1998-11-21CBr4개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법민석기; 김성일; 김무성
1999-02-02CBr4개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법민석기; 김성일; 김무성
1994-01CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성김용; 손창식; 김성일; 이민석; 김무성; 최인훈; 민석기
1996-07Characteristics of a nitrogen gas-pulsed electron cyclotron resonance plasma박용주; 김은규; 민석기; K. Ozasa; P. O'Keeffe; Y. Aoyagi
1990-01Characteristics of plasma enhanced chemical vapor deposition tungsten thin films.김용태; 민석기; 홍종성; 김충기
1995-03Characteristics of Ru and RuO₂ schottky contacts on hydrogenated N-type GaAs.박용주; 김은규; 이종근; 최원철; 민석기
1996-01Characteristics of the plasma-induced GaAs nitride layer and its application for the selective area growth.김성일; 민석기; 김은규; 박영주; 최원철; 이상훈; 손맹호
1991-01Characterization of a MOCVD grown GaAs/AlGaAs superlattice using spectroscopic ellipsometry.김용; 김무성; 김상열; 엄경숙; 민석기
1987-12Computer simulation analysis for the overlapped DLTS signal of midgap electron traps in HB-GaAs.김은규; 조훈영; 민석기
1996-01Cross sectional analysis of laser etched groove on AlGaAs/GaAs multilayers.김성일; 민석기; 박세기; 김은규; 이천
1988-03Deep trap studies in HB-GaAs using DLTS and optical DLTS.김은규; 조훈영; 민석기; S. C. Park; C. W. Han
1990-03Deep traps in GaAs layers grown on (100)Si substrates by Mo(VI).김용; 조훈영; 김은규; 윤주훈; 조성호; 김무성; 김현수; 민석기
1997-05Dependence of the electrical properties of carbon-doped GaAs and AlGaAs epilayers on the surface crystallographica orientation손창식; 박영균; 이승백; 김용; 김은규; 최인훈; 김성일; 민석기
1995-01Effect of excess oxygen on the properties of reactive sputtered RuO//x thin films.김용태; 이정건; 조성호; 민석기
1988-01Effect of flow rate ratios of SiH//4/NH//3/N//2 and SiH//4/NH//3/Ar on the properties of PECVD SiN//x:H films.김용태; 김춘근; 민석기
1996-01Effects of a rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs.손창식; 김성일; 김태근; 김용; 김무성; 민석기

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