| 2004-12 | Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors | Han, IK; Lee, JI; Lee, MB; Chang, SK; Kim, EK |
| 2003-03-15 | Growth of triangular shaped InGaAs/GaAs quantum wire structures | Kim, SI; Han, IK; Chung, SW; Jagadish, C |
| 2003-05-29 | High power broadband InGaAs/GaAs quantum dot superluminescent diodes | Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jung, JC; Han, IK |
| 2004-12 | High power laser diodes/superluminescent diodes | Han, IK |
| 2003-07 | High transfection efficiency of poly(4-vinylimidazole) as a new gene carrier | Ihm, JE; Han, KO; Han, IK; Ahn, KD; Han, DK; Cho, CS |
| 2000-07 | High-power broad-band superluminescent diode with low spectral modulation at 1.5-mu m wavelength | Song, JH; Cho, SH; Han, IK; Hu, Y; Heim, PJS; Johnson, FG; Stone, DR; Dagenais, M |
| 2003 | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping films | Lee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; Kim, EK |
| 2004-10-15 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | Song, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG |
| 2001-03 | Light-current characteristics of highly p-doped 1.55 mu m diffraction-limited high-power laser diodes | Han, IK; Woo, DH; Kim, SH; Lee, JI; Heo, DC; Jeong, JC; Johnson, FG; Cho, SH; Song, JH; Heim, PJS; Dagenais, M |
| 2001 | Linearization of quantum well electro-absorption modulator by quantum well intermixing technique for analog optical links | Choi, WJ; Han, IK; Park, YJ; Kim, EK; Lee, JI; Kim, WS; Yi, JC |
| 2001-12 | Low frequency noise in HEMT structure | Han, IK; Lee, JI; Brini, J; Chovet, A |
| 2000-12 | Low frequency noise spectroscopy for Schottky contacts | Lee, JI; Han, IK; Heo, DC; Brini, J; Chovet, A; Dimitriadis, CA; Jeong, JC |
| 2003-09 | Maximum power CW 2.45-W 1.55-mu m InGaAsP laterally tapered laser diodes | Heo, DC; Han, IK; Lee, JI; Jeong, JC |
| 1995-01 | Microwave characteristics of GaAs MESFET with optical illumination | Kim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K |
| 1998-08 | Optical characterization of GaAs/AlAs short period superlattices | Woo, DH; Han, IK; Choi, WJ; Lee, S; Kim, HJ; Lee, JI; Kim, SH; Kang, KN; Choi, SG; Kim, YD; Yoo, SD; Aspnes, DE; Rhee, SJ; Woo, JC |
| 2003-10 | Optical properties of GaAs/AlGaAs quantum dots grown by droplet epitaxy with post-growth annealing | Lee, CM; Lee, JI; Lee, DH; Leem, JY; Han, IK; Koguchi, N |
| 2002-11 | Optical properties of In0.5Ga0.5As/GaAs quantum dots grown by heterogeneous droplet epitaxy with post-growth annealing | Lee, CM; Noh, SK; Lee, JI; Lee, DH; Leem, JY; Han, IK; Mano, T; Koguchi, N |
| 2002-09 | Optical properties of InGaN/GaN multiple quantum wells | Lee, JI; Lee, CM; Leem, JY; Lim, KS; Han, IK |
| 2004-06-15 | Optical properties of silicon nanoparticles by ultrasound-induced solution method | Lee, S; Cho, WJ; Chin, CS; Han, IK; Choi, WJ; Park, YJ; Song, JD; Lee, JI |
| 2002 | P-channel MODFET as an optoelectronic detector | Kim, HJ; Kim, DM; Han, IK; Choi, WJ; Zimmermann, J; Lee, J |
| 2004-02-09 | Parametric study on optical properties of digital-alloy In(Ga1-zAlz)As/InP grown by molecular-beam epitaxy | Song, JD; Heo, DC; Han, IK; Kim, JM; Lee, YT; Park, SH |
| 2005-11 | Performance improvement of high-power AlGaAs lasers | Kim, KC; Kim, TG; Sung, YM; Choi, YC; Park, YJ; Han, IK; Lee, SW; Moon, GW; Yoon, SH; Jang, KY; Park, JI |
| 2004-08 | Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells | Lee, CM; Choi, SH; Kim, CS; Noh, SK; Lee, JI; Lim, KY; Han, IK |
| 2004-10 | Photoluminescence of Er-implanted GaN | Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC |
| 2005-03 | Poly (4-vinylimidazole) as nonviral gene carrier: in vitro and in vivo transfection | Ihm, JE; Han, KO; Hwang, CS; Kang, JH; Ahn, KD; Han, IK; Han, DK; Hubbell, JA; Cho, CS |
| 2001 | Role of inserting layer controlling wavelength in InGaAs quantum dots | Park, SK; Park, YJ; Kim, HJ; Lee, JH; Park, YM; Kim, EK; Choi, WJ; Han, IK; Lee, C |
| 2003-02 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing | Shin, JC; Choi, WJ; Han, IK; Park, YJ; Lee, JI; Kim, HJ; Choi, JW; Kim, EK |
| 1997-05-15 | Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy | Han, IK; Kim, EK; Lee, JI; Kim, SH; Kang, KN; Kim, Y; Lim, H; Park, HL |
| 2004-08 | Structural, optical, and electrical characterizations of a quantum cascade laser structure | Park, HK; Kim, JS; Kim, EK; Lee, CH; Song, JD; Han, IK |
| 2005-07 | Study of chirped quantum dot superluminescent diodes | Han, IK; Bae, HC; Cho, WJ; Lee, JI; Park, HL; Kim, TG; Lee, JI |
