| 2017-03 | GaAs solar cell on Si substrate Realized by wafer bonding | 최원준; 김상현; 박민수; 금대명; 김창주 |
| 2015-10 | GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding | 김상현; 금대명; 박민수; 김창주; 최원준 |
| 2014-10 | Growth of anatase and rutile TiO2@Sb:SnO2 heterostructures and their application in photoelectrochemical water splitting | 박상백; 이찬우; 조인선; 김상현; 박종훈; 김혜진; 김동완; 이상욱; 홍국선 |
| 2017-02 | Growth temperature dependent Ge epitaxy on GaAs(100) substrate | 김형준; 김상현; 주건우; 김한성; 심재필; 김성광; 임희정 |
| 2018-05 | Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials | 최원준; 송진동; 김형준; 김상현; 한재훈; 이수빈; 심재필; 주건우; 김성광; 김한성; 비덴코; 김호성; 금대명; 임희정; 임형락; Chang-Mo Kang; Dong Seon Lee |
| 2017-04 | Heterogeneously Integrated High-Performance GaAs Single-Junction
Solar Cells on Copper | 최원준; 김상현; 박민수; 금대명; 김창주; 윤의준 |
| 2021-05 | Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review | 한재훈; 안대환; 김영현; 김상현 |
| 2014-06 | Hierarchical assembly of TiO2-SrTiO3 heterostructures on conductive SnO2 backbone nanobelts for enhanced photoelectrochemical and photocatalytic performance | 박상백; 김상현; 김혜진; 이찬우; 송희조; 서세원; 박훈기; 김동완; 홍국선 |
| 2018-08 | High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer | 송진동; 김상현; 노일표; 금대명; Wenji Lu; 송윤흡; Jesus A. del Alamo |
| 2015-07 | High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions | Munetaka Noguchi; 김상현; Masafumi Yokoyama; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
| 2013-04 | High Mobility CMOS Technologies using III-V/Ge Channels on Si platform | Shinichi Takagi; 김상현; Masafumi Yokoyama; Rui Zhang; Noriyuki Taoka; Yuji Urabe; Tetsuji Yasuda; Hisashi Yamada; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka |
| 2011-10 | High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain | 김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryo Iida; 이성훈; Ryosho Nakane; Yuji Urabe; Noriyuki Miyata; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
| 2014-04 | High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Vth Tunability | 김상현; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
| 2013-10 | High-Performance InAs-On-Insulator n-MOSFETs with Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology | 김상현; Masafumi Yokoyama; Ryosho Nakane; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
| 2019-08 | Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs | 송진동; 김형준; 한재훈; 김한성; 김상현; 김성광; 신상훈; 금대명; 심재필; 이수빈; 주건우; M. A. ALAM |
| 2015-05 | III-V/Ge channel MOS device technologies in nano CMOS era | Shinichi Takagi; Rui Zhang; Junkyo Suh; 김상현; Masafumi Yokoyama; Koichi Nishi; Mitsuru Takenaka |
| 2016-07 | III-V/Ge MOS device technologies for low power integrated systems | 김상현; Shinichi Takagi; Munetaka Noguchi; Minsoo Kim; ChihYu Chang; Masafumi Yokoyama; Koichi Nishi; Rui Zhang; Mengnan Ke; Mitsuru Takenaka |
| 2012-06 | III?V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal?Oxide?Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding | Masafumi Yokoyama; 김상현; Rui Zhang; Noriyuki Taoka; Yuji Urabe; Tatsuro Maeda; Hideki Takagi; Tetsuji Yasuda; Hisashi Yamada; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Masakazu Sugiyama; Yoshiaki Nakano; Mitsuru Takenaka; Shinichi Takagi |
| 2012-10 | Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties | Rena Suzuki; Noriyuki Taoka; Masafumi Yokoyama; 김상현; Takuya Hoshii; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
| 2019-08 | Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on-Insulator n-MOSFETs | 김형준; 한재훈; 김한성; 이윤중; 임형락; 김성광; 금대명; 주병권; 김상현 |
| 2013-12 | Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxGa1-xAs metal-oxide-semiconductor field effect transistors | Noriyuki Taoka; Masafumi Yokoyama; 김상현; Rena Suzuki; Sunghoon Lee; Ryo Iida; Takuya Hoshii; Wipakorn Jevasuwan; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
| 2013-10 | Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors | Noriyuki Taoka; Masafumi Yokoyama; 김상현; Rena Suzuki; Sunghoon Lee; Ryo Iida; Takuya Hoshii; Wipakorn Jevasuwan; Tatsuro Maeda; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
| 2018-05 | Impact of Ground Plane Doping and BottomGate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel | 최원준; 송진동; 김형준; 김상현; 심재필; 김성광; 김한성; 금대명; Jaewon Kim; Chang Zoo Kim; Sung Jin Choi; Dae Hwan Kim; Dong Myong Kim |
| 2018-02 | Impact of Ground Plane Doping on InGaAs-OI MOSFETs | 최원준; 송진동; 김형준; 김상현; 김성광; 김한성; 금대명; 심재필; 김재원; 김창주; 최성진; 김대환; 김동명 |
| 2013-03 | Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks | C. Y. Chang; Masafumi Yokoyama; 김상현; Osamu Ichikawa; Takenori Osada; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
| 2019-09 | Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H2 annealing with Pt gate electrode | 송진동; 김형준; 황도경; 한재훈; 김한성; 임형락; 김성광; 금대명; 김상현 |
| 2018-02 | Improvement on interfacial quality of Ge MOS Capacitor using RIE O2 plasma treatment | 김형준; 김상현; 이수빈; 한재훈; 김성광; 임형락; 심재필; 주병권 |
| 2012-02 | In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with
self-aligned metal source/drain using Co-InGaAs alloys | 김상현; Masafumi Yokoyama; Noriyuki Taoka; Ryosho Nakane; Tetsuji Yasuda; Osamu Ichikawa; Noboru Fukuhara; Masahiko Hata; Mitsuru Takenaka; Shinichi Takagi |
| 2015-05 | In0.53Ga0.47As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide | 김상현; 금대명; 박민수; 최원준 |
| 2019-09 | InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K | 최원준; 박민철; 송진동; 김상현; 현혜영; 곽기성; 심철휘; 강지훈; 강수석; 금대명; Suk-Ho Choi |
