Browsing byAuthorKANG KWANG NHAM
Showing results 7 to 36 of 73
| Issue Date | Title | Author(s) |
|---|---|---|
| - | Carrier lifetime in dielectric cap disordered GaAs/AlGaAs quantum well by SiN capping layer. | W. J. Choi; Lee Seok; D. Woo; Lee Jung Il; S. K. Kim; J. H. Chu; S. K. Yu; KANG KWANG NHAM; D. Kim; K. Cho |
| - | CBE 에서 표면 장벽층의 두께에 따른 양자우물의 광학적 특성 . | 송기봉; Woo Deok Ha; Lee Seok; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 조규만 |
| - | Characteristics of semiconductor optical amplifier coated by double-layer antireflection | Lee Seok; 조용상; Woo Deok Ha; KIM HWE JONG; Han Il Ki; KPARK KYUNG HYUN; Kim Sun Ho; KANG KWANG NHAM; Jungkeun Lee; Takeshi Kamiya |
| - | Characterization of quasi-intrinsic semiconductor using magneto-transport and photo-transport effect. | KANG KWANG NHAM |
| - | Charge trapping instabilities in SiO2/InP MIS structures. | KANG KWANG NHAM; Lee Jung Il; 최병두; KIM CHOONG HWAN; 임한조; Han Il Ki |
| - | Compound semiconductors : optical and high speed application. | KANG KWANG NHAM |
| - | DC & RF characteristics of sub-micron microwave devices. | KANG KWANG NHAM; Yoo Jong Lee; 김동명; 전성민 |
| - | DC characteristics of submicron gate normally-on and normally-off MESFETs on VPE and MOCVD GaAs. | KANG KWANG NHAM; Yoo Jong Lee; EOM KYUNG SOOK; KIM MOO SUNG |
| - | Dielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2. | KANG KWANG NHAM; KIM HWE JONG; W. J. Choi; Lee Seok; D. Woo; Han Il Ki; S. K. Kim; S. H. Kim; Lee Jung Il |
| - | Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure. | 이희택; Choi Won Jun; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원 |
| - | Effect of dielectric-semiconductor capping layer combinations on the dielectric cap quantum well disordering of InGaAs/InGaAsP single quantum well structure | 이희택; Choi Won Jun; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원; 이종창 |
| - | Effect of gain and index nonlinearities on modulation characteristics of a three-section DBR laser. | KANG KWANG NHAM; Lee Seok; W. J. Choi; S. H. Kim; S. S. Choi; Y. Nakano; K. Tada |
| - | Electrical properties of SiNx/InP structure. | KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 권상덕; 최병두; 임한조; Han Il Ki |
| - | Fabrication and characterization of high speed InP-MSM photodetectors. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Choi Won Jun; KPARK KYUNG HYUN |
| - | Fabrication and characterization of homostructure GaAs δ -doped FETs. | KANG KWANG NHAM; Lee Jung Il; KIM YOUN; Han Il Ki; Min Suk-Ki; Y. J. Lee |
| - | Fabrication and dc characterization of submicron gate GaAs MESFET. | KANG KWANG NHAM |
| - | GaAs 기판상에 구성된 방향성 결합기를 이용한 진행파형 광변조기의 해석 . | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성철; Han Il Ki |
| - | GaAs/AlAs 단주기 초격자 구조의 광특성 | Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Seok; Kim Sun Ho; KANG KWANG NHAM |
| - | Gate voltage dependence parasitic resistence in LDD MOSFETs. | KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee; 김동명; Han Il Ki |
| - | Growth and characterization of silicon nitride films by PECVD. | KANG KWANG NHAM; Lee Jung Il; J. H. Jo; Han Il Ki; Y. J. Lee |
| - | High speed optical modulators on III-V semiconductors. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성철 |
| - | Impurity free vacancy disordering and its application to fabricate multiple wavelength on the same wafer | Choi Won Jun; Lee Seok; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; Larry A. Coldren |
| - | Insulating layer grown by PECVD for InP MISFET. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; Han Il Ki; Yoo Jong Lee; LEE MYOUNG BOG; 조준환 |
| - | Measurement of propagation losses and reflective of MQW electroabsorption waveguides using photocurrent. | KANG BYUNG-KWON; 박승한; PARK YOON HO; Byun Young Tae; KIM HWE JONG; Choi Won Jun; Woo Deok Ha; Lee Seok; Kim Sun Ho; KANG KWANG NHAM |
| - | Modeling of fixed type passive elements for ultra-high frequency IC design up to 18GHz. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; 홍성훈; 김봉열 |
| - | Optical controlled AlGaAs/GaAs pseudomorphic MODFET | KIM HWE JONG; 송상호; 김동명; Woo Deok Ha; Lee Seok; Choi Won Jun; Han Il Ki; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 조규만 |
| - | Optical properties of (GaAs)n(AlAs)n superlattices and the Al//0//.//5Ga//0//.//5As random alloy. | CHOI SUKGEUN; KANG KWANG NHAM; 김영동; SEOK JOO YI; 우종천; 유상덕; D. E. Aspnes; Woo Deok Ha; Kim Sun Ho |
| - | Optical responses of Al0.3Ga0.7As/GaAs/In0.13Ga0.87As double heterojunction pseudomorphic MODFET | KIM HWE JONG; 김동명; 정해양; Woo Deok Ha; Choi Won Jun; Lee Seok; Han Il Ki; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM; 조규만 |
| - | Optical studies on a series of AlAs/GaAs short period superlattices | Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Seok; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM; M.S. Oh; Y.D. Kim; S.G. Choi; E.H. Koh; S.J. Rhee; J.C. Woo |
| - | PECVD 방법으로 SiN 박막을 성장함으로써 얻어지는 양자우물 무질서화 및 양자우물의 Al 확산계수의 계산 . | Choi Won Jun; Lee Seok; Jingming Zhang; Lee Jung Il; KIM YOUN; KANG KWANG NHAM; KIM SANG KUK; 조규만 |
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