| - | A new ferroelectric gate structure for low power operation of non volatile memory devices | Kim Yong Tae; 심선일; Kim Seong Il; 최훈상; 최인훈; Makoto Ishida |
| - | Characteristics of SrTa2Bi2O9 thin films grown by MOCVD using a new strontium tantalum ethoxide (Sr[Ta(OEt)6]2) source | Kim Yong Tae; PARK YOUNG KYUN; 신동석; 최훈상; 최인훈 |
| - | Characteristics of the crystal structure and electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si structure | 최훈상; 김은홍; Kim Yong Tae; 최인훈 |
| - | Crystal structure and electrical properties Pt/SrBi2Nb2O9/ZrO2/Si ferroelectric gate structure | 최훈상; 임건식; 이종한; Kim Yong Tae; Kim Seong Il; 최인훈 |
| - | Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films | KIM CHUN KEUN; 김익수; 최훈상; Kim Seong Il; 이창우; Kim Yong Tae |
| - | Effect of low pressure annealing for low temperature crystallization of SrBi//2Ta//2O//9 ferroelectric thin films | 최훈상; 이관; 임근식; Kim Yong Tae; Kim Seong Il |
| - | Effects of Bi content on electrical properties of Pt/SrBi//2Nb//2O//9/Si ferroelectric gate structure | Kim Yong Tae; Kim Seong Il; 최훈상; KIM CHUN KEUN; 이창우 |
| - | Effects of Bi content on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure | KANG. DONGHOON; 최훈상; 이관; Kim Yong Tae; 이종한; 이건식; Kim Seong Il; 최인훈 |
| - | Effects of Sr/Bi composition ratio on ferroelectric properties of SrBi//2Bb//2O//9 thin films | Kim Yong Tae; 최훈상; Kim Seong Il; 최인훈 |
| - | Effects of voltage distribution in Pt/SrBi2Ta2O9/Ta2O5/Si structure on memory window of ferroelectric gate | Kim, Yong Tae; 최훈상; 박건상; 최인훈 |
| - | EL-MoM2 effects of Ta2O5 and Al2O3 buffer insulators on electrical characteristics of Pt/SrBi2Ta2O9/Si gate structure | 최훈상; Kim Yong Tae; M. Ischida; 최인훈; 이창우 |
| - | EL-MoM5 effects of Bi/Sr stoichiometric ratio on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure | Kim Yong Tae; Kim Seong Il; 최인훈; 최훈상; 이창우 |
| - | Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure | 최훈상; Kim Yong Tae; Kim Seong Il; 최인훈; Hoon Sang Choi; Seong Il Kim; In-Hoon Choi |
| - | Electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate structure | 최훈상; Kim Yong Tae; 김은홍; 최인훈 |
| - | Structural and electrical characteristics of ZrO ₂ as a gate dielectric and buffer layer grown by RF magnetron sputtering | 임근식; 최훈상; 이종한; Kim Yong Tae; Kim Seong Il; 최인훈 |
| - | The changes of the properties of Pt/SrBi2Ta2O9/Pt capacitors and Pt/SrBi2Ta2O9/CeO2/Si structures by post-annealing and their origin | 신동석; 최훈상; Ho Nyung Lee; Kim Yong Tae; PARK YOUNG KYUN; 최인훈 |
| - | The effects of various bottom electrodes in MFM structure on the ferroelectric properties of SrBi2Nb2O9 thin films using RF magnetron sputtering | 최훈상; 이종한; 임건식; 강민정; 최인훈; Kim Yong Tae; Kim Seong Il |
| 2003-08 | 단일 공정에 의한 고효율 단일모드 반도체 레이저 구조 제작을 위한 고밀도 양자 나노구조 형성 | 손창식; 백종협; 김성일; 박용주; 김용태; 최훈상; 최인훈 |
| - | (Undefined) | 최훈상; 조금석; Kim Yong Tae; 이관; 이종한; Kim Seong Il; 최인훈 |
