| 1998-10 | A self-assembled silicon quantum dot transistor operating at room temperature | 최범호; 황성민; I. G. Kim; 신형철; 김용; 김은규 |
| 1999-12 | Aligned In0.5Ga0.5As quantum dots on laser patterned GaAs substrate | 박세기; 현찬경; 민병돈; 김효진; 황성민; 김은규; H.K. Lee; 이천; 김용 |
| 1996-01 | Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations. | 손창식; 민병돈; 박만장; 황성민; 김성일; 김무성; 민석기 |
| 1996-08 | Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates | 김성일; 김무성; 김용; 손창식; 황성민; 민병돈; 김은규; 민석기 |
| 1996-01 | Conversion efficiency increase of GaAs solar cell grown on V-grooved GaAs substrate by metalorganc chemical vapor deposition. | 손창식; 박만장; 민병돈; 황성민; 김성일; 김은규; 민석기 |
| 1997-02 | Crystallographic orientation dependence of carbon incorporation into GaAs epilayers | 손창식; 김성일; 김용; 박영균; 민병돈; 황성민; 김은규; 민석기; 최인훈 |
| 1997-04 | Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄ | 손창식; 김성일; 김용; 황성민; 박영균; 김은규; 민석기; 최인철 |
| 2013-03 | Distinct Universality Classes of Domain Wall Roughness in Two-Dimensional Pt/Co/Pt Films | 문경웅; 김덕호; 유상철; 조정구; 황성민; 강병남; 민병철; 신경호; 최석봉 |
| 2001-08 | Effects of GaN buffer layer thickness on characteristics of GaN epilayer | 조용석; 고의관; 박용주; 김은규; 황성민; 임시종; 변동진 |
| 1996-01 | Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4. | 손창식; 황성민; 김성일; 황성민; 김무성; 민석기; 김은규; 김용 |
| 1995-01 | Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl//4. | 김용; 김무성; 김성일; 황성민; 강준모; 박양근; 민석기 |
| 1995-12 | Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl//4. | 김용; 김무성; 김성일; 황성민; 강준모; 박양근; 민석기 |
| 2015-10 | Evaluation of hindrance to the growth of SiN passivation layer by contamination of fluoride ions in front opening unified pod | 송길주; 황성민; 구수종; 김형련; 장희창; 홍정훈; 박현율; 최의지; 유승교; 김진영; 노태용; 이응선 |
| 2000-09 | Evaluations of strains in fused layers using patterned substrates | 황성민; 이주영; 박세기; 현찬경; 김용; 박용주; 김은규; 최인훈 |
| 1998-11 | Fabrication of AlGaAs/GaAs heteroface solar cells | 김효진; 박영균; 김성일; 김은규; 황성민; 김태환 |
| 1998-01 | Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapor deposition | 김태근; 손창식; 황성민; 김은규; 민석기; 임시종; 박정호 |
| 1997-04 | Fabrication of high-efficiency heteroface AlGaAs/GaAs solar cells grown by MOCVD | 황성민; 김성일; 이달진; 박영균; 김은규; 민석기; 김용 |
| 1997-03 | Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers | 김태근; 황성민; 김은규; 민석기; 전종일; 임시종; Jichai Jeong; 박종호 |
| 1995-11 | Facet evolution study on CCl4-doped AlGaAs/GaAs multilayer during MOCVD on patterned GaAs substrates. | 김용; 박양근; 강준모; 김무성; 김성일; 민석기; 황성민 |
| 2000-09 | Formation of high quality GaAs epilayers on InP substrates by using a patterned GaAs fusion layer | 황성민; 최인훈; 박용주; 현찬경; 김은규; 민석기 |
| 1996-01 | Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array layer. | 손창식; 김태근; 김성일; 박정호; 황성민; 민석기; 김은규; 박경현 |
| 1998-02 | GaAs/AlGaAs buried channel stripe lasers by single-stage metalorganic chemical vapor deposition on V-grooved substrate | 김은규; 김태근; 손창식; 황성민; 민석기 |
| 1998-11 | GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates | 김은규; 김태근; 손창식; 황성민; 김용; 박영균; 민석기 |
| 1996-01 | GaAs/AlGaAs quantum wire laser with an effective current blocking layer. | 김성일; 민석기; 김태근; 김은규; 박경현; 황성민; 박정호 |
| 2000-11 | Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate | 황성민; 박용주; 나종범; 김은규; 최인훈 |
| 1996-01 | Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | 손창식; 김성일; 민병돈; 황성민; 김은규; 민석기; 최인훈 |
| 2017-03 | Influence of Fluoride Ions Contamination in Front Opening Unified Pod (FOUP) Generating Defective Bonding Pad | 신유환; 김진영; 김민수; 권순석; 황성민; 김형륜; 장희창; 홍정훈; 송길주; 박현율; 노태용; 유승교 |
| 1997-03 | InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on v-grooved InGaAs/GaAs substrates | 이민석; 김은규; 김성일; 황성민; 김춘근; 민석기; 이정용 |
| 1996-01 | Large-area GaAs/AlGaAs quantum wire array grown by metalorganic chemical vapor deposition on a GaAs substrate with submicron gratings. | 김태근; 황성민; 김은규; 민석기; 박정혜; 박정호 |
| 1995-01 | Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates. | 김성일; 민석기; 김용; 김무성; 강준모; 황성민; 박양근 |
