Browsing by Author 황성민

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Showing results 1 to 30 of 55

Issue DateTitleAuthor(s)
1998-10A self-assembled silicon quantum dot transistor operating at room temperature최범호; 황성민; I. G. Kim; 신형철; 김용; 김은규
1999-12Aligned In0.5Ga0.5As quantum dots on laser patterned GaAs substrate박세기; 현찬경; 민병돈; 김효진; 황성민; 김은규; H.K. Lee; 이천; 김용
1996-01Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.손창식; 민병돈; 박만장; 황성민; 김성일; 김무성; 민석기
1996-08Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates김성일; 김무성; 김용; 손창식; 황성민; 민병돈; 김은규; 민석기
1996-01Conversion efficiency increase of GaAs solar cell grown on V-grooved GaAs substrate by metalorganc chemical vapor deposition.손창식; 박만장; 민병돈; 황성민; 김성일; 김은규; 민석기
1997-02Crystallographic orientation dependence of carbon incorporation into GaAs epilayers손창식; 김성일; 김용; 박영균; 민병돈; 황성민; 김은규; 민석기; 최인훈
1997-04Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄손창식; 김성일; 김용; 황성민; 박영균; 김은규; 민석기; 최인철
2013-03Distinct Universality Classes of Domain Wall Roughness in Two-Dimensional Pt/Co/Pt Films문경웅; 김덕호; 유상철; 조정구; 황성민; 강병남; 민병철; 신경호; 최석봉
2001-08Effects of GaN buffer layer thickness on characteristics of GaN epilayer조용석; 고의관; 박용주; 김은규; 황성민; 임시종; 변동진
1996-01Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4.손창식; 황성민; 김성일; 황성민; 김무성; 민석기; 김은규; 김용
1995-01Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl//4.김용; 김무성; 김성일; 황성민; 강준모; 박양근; 민석기
1995-12Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl//4.김용; 김무성; 김성일; 황성민; 강준모; 박양근; 민석기
2015-10Evaluation of hindrance to the growth of SiN passivation layer by contamination of fluoride ions in front opening unified pod송길주; 황성민; 구수종; 김형련; 장희창; 홍정훈; 박현율; 최의지; 유승교; 김진영; 노태용; 이응선
2000-09Evaluations of strains in fused layers using patterned substrates황성민; 이주영; 박세기; 현찬경; 김용; 박용주; 김은규; 최인훈
1998-11Fabrication of AlGaAs/GaAs heteroface solar cells김효진; 박영균; 김성일; 김은규; 황성민; 김태환
1998-01Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapor deposition김태근; 손창식; 황성민; 김은규; 민석기; 임시종; 박정호
1997-04Fabrication of high-efficiency heteroface AlGaAs/GaAs solar cells grown by MOCVD황성민; 김성일; 이달진; 박영균; 김은규; 민석기; 김용
1997-03Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers김태근; 황성민; 김은규; 민석기; 전종일; 임시종; Jichai Jeong; 박종호
1995-11Facet evolution study on CCl4-doped AlGaAs/GaAs multilayer during MOCVD on patterned GaAs substrates.김용; 박양근; 강준모; 김무성; 김성일; 민석기; 황성민
2000-09Formation of high quality GaAs epilayers on InP substrates by using a patterned GaAs fusion layer황성민; 최인훈; 박용주; 현찬경; 김은규; 민석기
1996-01Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array layer.손창식; 김태근; 김성일; 박정호; 황성민; 민석기; 김은규; 박경현
1998-02GaAs/AlGaAs buried channel stripe lasers by single-stage metalorganic chemical vapor deposition on V-grooved substrate김은규; 김태근; 손창식; 황성민; 민석기
1998-11GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates김은규; 김태근; 손창식; 황성민; 김용; 박영균; 민석기
1996-01GaAs/AlGaAs quantum wire laser with an effective current blocking layer.김성일; 민석기; 김태근; 김은규; 박경현; 황성민; 박정호
2000-11Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate황성민; 박용주; 나종범; 김은규; 최인훈
1996-01Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4.손창식; 김성일; 민병돈; 황성민; 김은규; 민석기; 최인훈
2017-03Influence of Fluoride Ions Contamination in Front Opening Unified Pod (FOUP) Generating Defective Bonding Pad신유환; 김진영; 김민수; 권순석; 황성민; 김형륜; 장희창; 홍정훈; 송길주; 박현율; 노태용; 유승교
1997-03InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on v-grooved InGaAs/GaAs substrates이민석; 김은규; 김성일; 황성민; 김춘근; 민석기; 이정용
1996-01Large-area GaAs/AlGaAs quantum wire array grown by metalorganic chemical vapor deposition on a GaAs substrate with submicron gratings.김태근; 황성민; 김은규; 민석기; 박정혜; 박정호
1995-01Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates.김성일; 민석기; 김용; 김무성; 강준모; 황성민; 박양근