- | A self-assembled silicon quantum dot transistor operating at room temperature | 최범호; 황성민; I. G. Kim; 신형철; KIM YOUN; KIM EUN KYU |
- | Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations. | SON CHANG-SIK; MIN BYUNG DON; 박만장; 황성민; Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
- | Conversion efficiency increase of GaAs solar cell grown on V-grooved GaAs substrate by metalorganc chemical vapor deposition. | SON CHANG-SIK; 박만장; MIN BYUNG DON; 황성민; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
- | Crystallographic orientation dependence of carbon incorporation into GaAs epilayers | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
- | Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄ | SON CHANG-SIK; Kim Seong Il; KIM YOUN; 황성민; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인철 |
2001-08 | Effects of GaN buffer layer thickness on characteristics of GaN epilayer | 조용석; 고의관; 박용주; 김은규; 황성민; 임시종; 변동진 |
- | Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4. | SON CHANG-SIK; 황성민; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki; KIM EUN KYU; KIM YOUN |
- | Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl//4. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; KANG JOON MO; 박양근; Min Suk-Ki |
- | Fabrication of AlGaAs/GaAs heteroface solar cells | KIM HEO JEN; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; 황성민; 김태환 |
- | Fabrication of high-efficiency heteroface AlGaAs/GaAs solar cells grown by MOCVD | 황성민; Kim Seong Il; 이달진; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM YOUN |
- | Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array layer. | SON CHANG-SIK; KIM TAE-GEUN; Kim Seong Il; PARK JEONG HO; 황성민; Min Suk-Ki; KIM EUN KYU; KPARK KYUNG HYUN |
- | GaAs/AlGaAs buried channel stripe lasers by single-stage metalorganic chemical vapor deposition on V-grooved substrate | KIM EUN KYU; KIM TAE-GEUN; SON CHANG-SIK; 황성민; Min Suk-Ki |
1996-01 | GaAs/AlGaAs quantum wire laser with an effective current blocking layer. | 김성일; 민석기; 김태근; 김은규; 박경현; 황성민; 박정호 |
- | Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
- | Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; KANG JOON MO; 황성민; 박양근 |
- | Lateral growth rate control of GaAs on patterned substrates by CCl//4 and CBr//4 during MOCVD. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; MIN BYUNG DON; Min Suk-Ki |
1996-01 | Lateral growth rate enhancement on patterned GaAs substrate in [001] direction with CCl//4 by MOCVD. | 김성일; 민석기; 황성민; 김은규; 민병돈; 이민석; 맹선재 |
- | Lateral growth rate enhancement on patterned GaAs substrates with CCl//4 by MOCVD. | KIM YOUN; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki |
- | Maskless selective epitaxial growth on patterned GaAs substrates by atmospheric pressure MOCVD | SON CHANG-SIK; Kim Seong Il; PARK YOUNG KYUN; 황성민; 한철구; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
1999-09 | Measurement of the crystallinity and the optical properties for wafer-fused GaAs epilayers on InP substrates | 황성민; 이주영; 김은규; 강동훈; 최인훈; 김용 |
1996-09 | MOCVD 법에 의한 GaAs/AlGaAs 에피층의 수평 방향 성장률에 대한 CCl4 유입 효과 | 김성일; 김무성; 김용; 황성민; 민병돈; 손창식; 김은규; 민석기 |
- | One-step selective growth of GaAs on V-groove patterned GaAs substrate using CBr4 and CCl4 | KIM EUN KYU; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; SON CHANG-SIK; 한철구; 황성민; Min Suk-Ki; 최인훈 |
1998-05 | Properties of wafer-fused In0.2Ga0.8As/GaAs and InP/GaAs heterointerfaces | 최창학; 황성민; 김용; 김은규; 민석기; 남산; 변재동 |
- | Temperature-dependent PL spectra of quantum wire array and new technique for its application to laser. | SON CHANG-SIK; KIM TAE-GEUN; KPARK KYUNG HYUN; 황성민; Kim Seong Il; KIM MOO SUNG; Min Suk-Ki; PARK JEONG HO |
1995-01 | The carbon doping characteristics of GaAs epilayers grown on GaAs substrates with various crystal orientations. | 김성일; 민석기; 민병돈; 황성민; 김무성 |
1995-01 | The facet evolution analysis of GaAs/AlGaAs multilayers grown on GaAs substrates with various patterns using CCl//4. | 김성일; 민석기; 황성민; 민병돈; 김무성 |
- | The growth of high quality GaAs epilayers on stripe patterned InP substrates with a transferred GaAs fused layer | 황성민; Park Young Ju; KIM EUN KYU; 최인훈 |
- | The growth of high quality GaAs epilayers on stripe patterned InP substrates with a transferred GaAs fused layer | 황성민; LEE JU YOUNG; KIM EUN KYU; 최인훈; KIM YOUN |
- | The structural and optical properties of quantum wires grown on patterned InGaAs/GaAs substrate by atmospheric pressure MOCVD. | SON CHANG-SIK; LEE MIN-SUK; C. K. Kim; 황성민; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
- | Theoretical and experimental conversion efficiency of GaAs/AlGaAs solar cell structures grown by metalorganic chemical vapor deposition. | SON CHANG-SIK; MIN BYUNG DON; 황성민; K. K. Kim; M. H. Son; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 박만종 |