Browsing byAuthorC. S. Kwon

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Showing results 1 to 14 of 14

Issue DateTitleAuthor(s)
1994-01Annealing effects on the properties of TiW/WNx bilayer.김용태; D. J. Kim; C. S. Kwon; J. W. Park; 민석기
1993-01Atomic force microscopic observation in the surface morphologies and roughness of plasma deposited tungsten and tungsten nitride thin films.Kim Yong Tae; C. S. Kwon; I. H. Choi; C. W. Lee; Min Suk-Ki
1994-01Characteristics of RF magnetron sputtered (Ba, Sr)TiO//3 thin films on RuO//2 bottom electrode.Kim Yong Tae; J. G. Lee; H. N. Lee; C. S. Kwon; S. H. Choh; Min Suk-Ki
-Characteristics of RuOx thin films as a sacrificial diffusion barrier for Cu metallizationKim Yong Tae; H. S. Yoon; C. S. Kwon; H. N. Lee; J. Jang; Min Suk-Ki
1994-01Comparison of high temperature thermal stability of Ru and RuO//2 schottky contact to GaAs.Kim Yong Tae; S. K. Kwak; C. W. Lee; J. G. Lee; C. S. Kwon; K. S. Jung; Min Suk-Ki
1993-01Comparison of plasma deposited tungsten and tungsten nitride schottky contacts to GaAs.Kim Yong Tae; S. J. Lee; C. S. Kwon; C. W. Lee; Min Suk-Ki
1993-01Effects of nitrogen on the stress of plasma deposited tungsten and tungsten nitride thin films.Kim Yong Tae; S. J. Lee; C. S. Kwon; Y. W. Park; C. C. Lee; C. W. Lee; Min Suk-Ki
1995-01New concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface.Kim Yong Tae; S. K. Kwak; C. S. Kwon; D. J. Kim; C. W. Lee; I. H. Choi; Min Suk-Ki
1994-01Nitrogen implanted tungsten thin films for Cu diffusion barrier.Kim Yong Tae; D. J. Kim; C. S. Kwon; I. H. Choi; Min Suk-Ki
1994-01Post annealing characteristics of RF magnetron sputtered PbTiO//3 films.Kim Yong Tae; H. N. Lee; J. G. Lee; C. S. Kwon; S. H. Choh; Min Suk-Ki
-Study on physical properties of Cu-CVD for ULSI interconnects.Kim Yong Tae; Y. S. Kim; S. K. Kwak; C. S. Kwon; D. G. Jung; Min Suk-Ki
1995-01The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization.김용태; 민석기; C. S. Kwon; I. H. Choi
-The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization.Kim Yong Tae; C. S. Kwon; D. J. Kim; J. Y. Lee; I. H. Choi
1995-01The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization.김용태; C. S. Kwon; D. J. Kim; J. Y. Lee; I. H. Choi

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