| - | A Study on the Temperature Dependence of the Threshold Switching Characteristics of Ge2Sb2Te5 | Lee Suyoun; Jeong, Doo Seok; Jeung-hyun Jeong; Wu Zhe; Park Young-wook; Hyung-Woo Ahn; CHEONG, BYUNG KI |
| - | An Experimental Analysis of the Thermo-optic Characteristics of PbTe Thin Films by a Real Time Electrical-Optical Characterization | Lee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; D.H.Kim; CHEONG, BYUNG KI |
| - | An experimental investigation on the origin of super-resolution effects of Te-based chalcogenide semiconducting thin films | Lee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; Donghwan Kim; CHEONG, BYUNG KI |
| - | An NSOM measurement of the near-field intensity profile of transmitted light due to a PbTe thin film material for super-resolution optical memory | LEE, TAEK SUNG; Lee Hyun Seok; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; S.T.Whang; K.M.Cho; CHEONG, BYUNG KI |
| - | AZO/Mo P2 Contact Resistance of the Monolithic Integrated CIGS Modules | Yoon Ju Heon; Na Joo Ran; Tae-Yeon Seong; Jin-Woo Lee; Dong Keun Lee; Hisun Pak; Jeung-hyun Jeong |
| - | Back contact design using Mo and Mo:Na for low-temperature Cu(In,Ga)Se2 deposition | Eun-A Ok; Han-Kyu Seo; KIM, WON MOK; JONG-KEUK, PARK; Baik, Young Joon; Jeung-hyun Jeong |
| - | Characteristics of phase change memory devices based on Ge-doped SbTe and its derivative | CHEONG, BYUNG KI; Jeung-hyun Jeong; Lee Suyoun; Kim Inho; Wu Zhe; Ahn Hyoung Woo; Kim Seul-Cham; LEE HYUN SUCK; Park Young-wook |
| - | Characterization of interface between amorphous Ge2Sb2Te5 and TiN by x-ray photoelectron spectroscopy | Jeong, Doo Seok; Lee Suyoun; Jeung-hyun Jeong; CHEONG, BYUNG KI; Cheol Seong Hwang |
| - | Characterization of the super-resolution effects of PbTe thin films | Lee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; Donghwan Kim; CHEONG, BYUNG KI |
| - | Comparative study on thickness dependent properties of TCO thin films grown on glass and PET substrates | Kim Jin-soo; C.W. Yang; T.-Y. Seong; J.W. Park; LEE, TAEK SUNG; LEE, KYEONG SEOK; Jeung-hyun Jeong; KIM, WON MOK |
| - | Comparison of Quantitative Analysis for CIGS Thin Films by TOFSIMS, Magnetic Sector SIMS, and AES | 김선희; Jang Yun Jung; 윤정현; Jeung-hyun Jeong; LEE, YEON HEE |
| - | Comparison of Thickness Dependent Properties of ITO and GZO Thin Films Grown on Glass and PET Substrates | Kim Jin-soo; Jeung-hyun Jeong; JONG-KEUK, PARK; LEE, KYEONG SEOK; Baik, Young Joon; Tae-Yeon Seong; KIM, WON MOK |
| - | Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming | Lee Suyoun; Jeung-hyun Jeong; Park Young-wook; Wu Zhe; LEE, TAEK SUNG; CHEONG, BYUNG KI |
| - | Demonstration of a high-speed multi-level cell phase-change memory using Ge-doped SbTe | Zang Gang; Wu Zhe; Park Young Wook; Jeung-hyun Jeong; Jeong, Doo Seok; Yoo, Won Jong; CHEONG, BYUNG KI |
| - | Demonstration of Micro-cantilever Devices using Pb(Zr,Ti)O3 Thin Films SOl-gel Processed on Nanocrystalline Diamond Thin Films | Jeung-hyun Jeong; JONG-KEUK, PARK; Yun Ju Heon; Hwang Gyu Weon; Lee, Wook Seong; Baik, Young Joon |
| - | Device Characteristics of Ge-doped SbTe Material System for Phase Change Random Access Memory | Jeung-hyun Jeong; Lee Suyoun; Wu Zhe; LEE, TAEK SUNG; KIM, WON MOK; Kim Seul-Cham; Kyu Hwan Oh; CHEONG, BYUNG KI |
| - | Effect of deposition temperature and Ga content on the properties of Ga-doped ZnO films | Son Ju Myeong; Kim Yong Hyun; LEE, TAEK SUNG; CHEONG, BYUNG KI; Jeung-hyun Jeong; D.Y. Jeong; T.-Y. Seong; KIM, WON MOK |
| - | Effect of electrodepositing and annealing parameters on properties of
device-quality CuIn(Se,S)2 thin films on a Mo/glass substrate | Park Young Il; 김동환; Jeong Da Woon; Jeung-hyun Jeong; Lee Doh-Kwon; Kim, Hong Gon |
| - | Effect of fluorine and hydrogen co-doping on the Properties of Al-doped ZnO films | Kim Yong Hyun; S.H. Lee; T.-Y. Seong; Donghwan Kim; Jeung-hyun Jeong; LEE, KYEONG SEOK; KIM, WON MOK |
| - | Effect of the Mo back contact microstructure on the CIGS preferred orientation and the cell efficiency | Yoon Ju Heon; Kim Jong Keun; Yoon Gwan Hee; Jeung-hyun Jeong |
| - | Effect of the Mo back contact microstructure on the preferred orientation of CIGS thin films | Yoon Ju Heon; Yoon Gwan Hee; Kim Jong Keun; KIM, WON MOK; JONG-KEUK, PARK; LEE, TAEK SUNG; Baik, Young Joon; Tae-Yeon Seong; Jeung-hyun Jeong |
| - | Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode | Dae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Ki-Bum Kim |
| - | Experimental study of the effect of CBD-CdS process on the formation of CdS/CIGS junction in CIGS photovoltaics | Seo Han-kyu; Kwan-Hee Yoon; Ok Eun a; Kim Jin-soo; KIM, WON MOK; JONG-KEUK, PARK; Baik, Young Joon; 성태연; 이동화; 조훈영; Jeung-hyun Jeong |
| - | Fast and versatile memory behavior of phase change memory with (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x chalcogenide alloy and its kinetic characteristics | Dong-Ho Ahn; Tae-Yon Lee; Hyungoo Jun; Dongbok Lee; Dae-Hwan Kang; Jeung-hyun Jeong; CHEONG, BYUNG KI; Ki-Bum Kim |
| - | Flexible CIGS thin film PV technology for the application to polyimide foil substrate | Jeung-hyun Jeong |
| - | Improved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTe | Wu Zhe; Park Young Wook; Hyung-Woo Ahn; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kwangsoo No; CHEONG, BYUNG KI |
| - | Improvement of Na doping uniformity in CIGS films by engineering Mo back contact microstructures | 윤관희; Ju-Heon Yoon; Dong-Hwan Kim; Jeung-hyun Jeong |
| - | Influence of Antimony (Sb) underlying layer on low-temperature growth of CIGS films and the photovoltaic performance | Ok Eun-A; KIM, WON MOK; JONG-KEUK, PARK; Baik, Young Joon; Jeung-hyun Jeong |
| - | Investigation of Morphological Aspects of Cu-In Alloy Nanoparticle Layers upon Selenization in Various Conditions | Moon Byoung min; 김영도; Kim, Hong Gon; Jeung-hyun Jeong; Lee Doh-Kwon |
| - | Investigation on the enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode | Dae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Dongbok Lee; Hyun-Mi Kim; Ki-Bum Kim |
