Browsing byAuthorKANG KWANG NHAM
Showing results 1 to 30 of 73
| Issue Date | Title | Author(s) |
|---|---|---|
| - | A study on the instability in PECVD-SiNx/InP structure utilizing capacatance and conductnace techniques. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; LEE MYOUNG BOG |
| - | A variation of DC and microwave characteristics in pseudomorphic HEMT's under optical illumination. | KANG KWANG NHAM; KIM HWE JONG; D. H. Woo; S. J. Kim; D. M. Kim; H. Chung; Lee Seok; Han Il Ki; W. J. Choi; S. H. Kim; Lee Jung Il; K. Cho |
| - | Active and passive element modeling for MMIC, talking process conditions into account. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Kim Seong Il; S. H. Hong |
| - | Analysis of GaAs schottky contact traveling wave optical coupler. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성훈 |
| - | Analysis of the HR coated facet effect on the spectral characteristics of a three-section DBR laser under frequency tuning. | KANG KWANG NHAM; Lee Seok; S. H. Kim; Lee Jung Il; D. M. Kim; H. L. Park |
| 1992-01 | Auger electron spectroscopy analysis of Au/Ti/TiNxGaAs structure. | KANG KWANG NHAM; Lee Jung Il; HAN SEUNG HEE; CHOI BYEONJ JIN; V. Bosy; Han Il Ki |
| - | Carrier lifetime in dielectric cap disordered GaAs/AlGaAs quantum well by SiN capping layer. | W. J. Choi; Lee Seok; D. Woo; Lee Jung Il; S. K. Kim; J. H. Chu; S. K. Yu; KANG KWANG NHAM; D. Kim; K. Cho |
| - | CBE 에서 표면 장벽층의 두께에 따른 양자우물의 광학적 특성 . | 송기봉; Woo Deok Ha; Lee Seok; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 조규만 |
| - | Characteristics of semiconductor optical amplifier coated by double-layer antireflection | Lee Seok; 조용상; Woo Deok Ha; KIM HWE JONG; Han Il Ki; KPARK KYUNG HYUN; Kim Sun Ho; KANG KWANG NHAM; Jungkeun Lee; Takeshi Kamiya |
| - | Characterization of quasi-intrinsic semiconductor using magneto-transport and photo-transport effect. | KANG KWANG NHAM |
| - | Charge trapping instabilities in SiO2/InP MIS structures. | KANG KWANG NHAM; Lee Jung Il; 최병두; KIM CHOONG HWAN; 임한조; Han Il Ki |
| 1997-05 | Chirped DBR grating 구조가 파장 가변 다전극 DBR 레이저 다이오드의 특성에 미치는 영향 . | 조성호; KIM HWE JONG; Han Il Ki; Choi Won Jun; Lee Seok; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; CHOI SANG SAM; 윤태훈 |
| - | Compound semiconductors : optical and high speed application. | KANG KWANG NHAM |
| - | DC & RF characteristics of sub-micron microwave devices. | KANG KWANG NHAM; Yoo Jong Lee; 김동명; 전성민 |
| - | DC characteristics of submicron gate normally-on and normally-off MESFETs on VPE and MOCVD GaAs. | KANG KWANG NHAM; Yoo Jong Lee; EOM KYUNG SOOK; KIM MOO SUNG |
| - | Dielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2. | KANG KWANG NHAM; KIM HWE JONG; W. J. Choi; Lee Seok; D. Woo; Han Il Ki; S. K. Kim; S. H. Kim; Lee Jung Il |
| - | Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure. | 이희택; Choi Won Jun; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원 |
| - | Effect of dielectric-semiconductor capping layer combinations on the dielectric cap quantum well disordering of InGaAs/InGaAsP single quantum well structure | 이희택; Choi Won Jun; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원; 이종창 |
| - | Effect of gain and index nonlinearities on modulation characteristics of a three-section DBR laser. | KANG KWANG NHAM; Lee Seok; W. J. Choi; S. H. Kim; S. S. Choi; Y. Nakano; K. Tada |
| - | Electrical properties of SiNx/InP structure. | KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 권상덕; 최병두; 임한조; Han Il Ki |
| - | Fabrication and characterization of high speed InP-MSM photodetectors. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Choi Won Jun; KPARK KYUNG HYUN |
| - | Fabrication and characterization of homostructure GaAs δ -doped FETs. | KANG KWANG NHAM; Lee Jung Il; KIM YOUN; Han Il Ki; Min Suk-Ki; Y. J. Lee |
| - | Fabrication and dc characterization of submicron gate GaAs MESFET. | KANG KWANG NHAM |
| 1999-07 | Fe ion을 주입한 1.55㎛ MQW 레이저 다이오드의 전기적 절연 특성 | KANG BYUNG-KWON; KIM TAE GON; PARK YOON HO; Woo Deok Ha; Lee Seok; Kim Sun Ho; KANG KWANG NHAM; SONG JONG HAN; 황정남; 박승한 |
| - | GaAs 기판상에 구성된 방향성 결합기를 이용한 진행파형 광변조기의 해석 . | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성철; Han Il Ki |
| - | GaAs/AlAs 단주기 초격자 구조의 광특성 | Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Seok; Kim Sun Ho; KANG KWANG NHAM |
| 1997-04 | Gas source molecular beam epitaxy 를 이용한 GaAs/AlGaAs 다중양자우물 구조의 성장 | Woo Deok Ha; CHOI SUKGEUN; KIM HWE JONG; Han Il Ki; Choi Won Jun; Lee Seok; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM |
| - | Gate voltage dependence parasitic resistence in LDD MOSFETs. | KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee; 김동명; Han Il Ki |
| - | Growth and characterization of silicon nitride films by PECVD. | KANG KWANG NHAM; Lee Jung Il; J. H. Jo; Han Il Ki; Y. J. Lee |
| - | High speed optical modulators on III-V semiconductors. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성철 |
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