Browsing byAuthorKANG KWANG NHAM

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Showing results 1 to 30 of 73

Issue DateTitleAuthor(s)
-A study on the instability in PECVD-SiNx/InP structure utilizing capacatance and conductnace techniques.KANG KWANG NHAM; Lee Jung Il; Han Il Ki; LEE MYOUNG BOG
-A variation of DC and microwave characteristics in pseudomorphic HEMT's under optical illumination.KANG KWANG NHAM; KIM HWE JONG; D. H. Woo; S. J. Kim; D. M. Kim; H. Chung; Lee Seok; Han Il Ki; W. J. Choi; S. H. Kim; Lee Jung Il; K. Cho
-Active and passive element modeling for MMIC, talking process conditions into account.KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Kim Seong Il; S. H. Hong
-Analysis of GaAs schottky contact traveling wave optical coupler.KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성훈
-Analysis of the HR coated facet effect on the spectral characteristics of a three-section DBR laser under frequency tuning.KANG KWANG NHAM; Lee Seok; S. H. Kim; Lee Jung Il; D. M. Kim; H. L. Park
1992-01Auger electron spectroscopy analysis of Au/Ti/TiNxGaAs structure.KANG KWANG NHAM; Lee Jung Il; HAN SEUNG HEE; CHOI BYEONJ JIN; V. Bosy; Han Il Ki
-Carrier lifetime in dielectric cap disordered GaAs/AlGaAs quantum well by SiN capping layer.W. J. Choi; Lee Seok; D. Woo; Lee Jung Il; S. K. Kim; J. H. Chu; S. K. Yu; KANG KWANG NHAM; D. Kim; K. Cho
-CBE 에서 표면 장벽층의 두께에 따른 양자우물의 광학적 특성 .송기봉; Woo Deok Ha; Lee Seok; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 조규만
-Characteristics of semiconductor optical amplifier coated by double-layer antireflectionLee Seok; 조용상; Woo Deok Ha; KIM HWE JONG; Han Il Ki; KPARK KYUNG HYUN; Kim Sun Ho; KANG KWANG NHAM; Jungkeun Lee; Takeshi Kamiya
-Characterization of quasi-intrinsic semiconductor using magneto-transport and photo-transport effect.KANG KWANG NHAM
-Charge trapping instabilities in SiO2/InP MIS structures.KANG KWANG NHAM; Lee Jung Il; 최병두; KIM CHOONG HWAN; 임한조; Han Il Ki
-Compound semiconductors : optical and high speed application.KANG KWANG NHAM
-DC & RF characteristics of sub-micron microwave devices.KANG KWANG NHAM; Yoo Jong Lee; 김동명; 전성민
-DC characteristics of submicron gate normally-on and normally-off MESFETs on VPE and MOCVD GaAs.KANG KWANG NHAM; Yoo Jong Lee; EOM KYUNG SOOK; KIM MOO SUNG
-Dielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2.KANG KWANG NHAM; KIM HWE JONG; W. J. Choi; Lee Seok; D. Woo; Han Il Ki; S. K. Kim; S. H. Kim; Lee Jung Il
-Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure.이희택; Choi Won Jun; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원
-Effect of dielectric-semiconductor capping layer combinations on the dielectric cap quantum well disordering of InGaAs/InGaAsP single quantum well structure이희택; Choi Won Jun; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원; 이종창
-Effect of gain and index nonlinearities on modulation characteristics of a three-section DBR laser.KANG KWANG NHAM; Lee Seok; W. J. Choi; S. H. Kim; S. S. Choi; Y. Nakano; K. Tada
-Electrical properties of SiNx/InP structure.KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 권상덕; 최병두; 임한조; Han Il Ki
-Fabrication and characterization of high speed InP-MSM photodetectors.KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Choi Won Jun; KPARK KYUNG HYUN
-Fabrication and characterization of homostructure GaAs δ -doped FETs.KANG KWANG NHAM; Lee Jung Il; KIM YOUN; Han Il Ki; Min Suk-Ki; Y. J. Lee
-Fabrication and dc characterization of submicron gate GaAs MESFET.KANG KWANG NHAM
-GaAs 기판상에 구성된 방향성 결합기를 이용한 진행파형 광변조기의 해석 .KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성철; Han Il Ki
-GaAs/AlAs 단주기 초격자 구조의 광특성Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Seok; Kim Sun Ho; KANG KWANG NHAM
-Gate voltage dependence parasitic resistence in LDD MOSFETs.KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee; 김동명; Han Il Ki
-Growth and characterization of silicon nitride films by PECVD.KANG KWANG NHAM; Lee Jung Il; J. H. Jo; Han Il Ki; Y. J. Lee
-High speed optical modulators on III-V semiconductors.KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성철
-Impurity free vacancy disordering and its application to fabricate multiple wavelength on the same waferChoi Won Jun; Lee Seok; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; Larry A. Coldren
-Insulating layer grown by PECVD for InP MISFET.KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; Han Il Ki; Yoo Jong Lee; LEE MYOUNG BOG; 조준환
-Measurement of propagation losses and reflective of MQW electroabsorption waveguides using photocurrent.KANG BYUNG-KWON; 박승한; PARK YOON HO; Byun Young Tae; KIM HWE JONG; Choi Won Jun; Woo Deok Ha; Lee Seok; Kim Sun Ho; KANG KWANG NHAM

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