| 2000-04 | A new type thin film bulk acoustic resonator(TFR) using surface micromachining technique | 김현호; 이시형; 주병권; 이전국; 오명환; 김수원 |
| 2001-04 | A noble suspended type thin film resonator (STFR) using the SOI technology | 김현호; 주병권; 이윤희; 이시형; 이전국; 김수원 |
| 2000-07 | A study on C-axis preferred orientation of ZnO thin film at Ar/O2 gas ratios | 이동윤; 박용욱; 남산; 이전국; 김현재; 윤석진; 황금찬 |
| 1990-01 | A study on the cordierite ceramic composite dispersed with the zirconia | 정형진; 오영제; 이전국 |
| 2009-02 | A study on the fabrication and design of Ta/Al/AlOx/Al/Ta superconducting tunnel junction | 윤호섭; 양민규; 이전국; 박영식; 박장현 |
| 2001-07 | A study on the overmoded FBAR filter | 김희영; 서기원; 김인태; 주병권; 이전국; 김형동 |
| 2001-12 | Acoustic characterization of ALN films using a high overtone bulk acoustic wave resonator | 이시형; 김주형; 이전국; G.D. Mansfeld; S.G. Alekseev; 윤기현 |
| 2002-01 | AIN piezoelectric materials for wireless communication thin film components | 김주형; 이시형; 안진호; 이전국 |
| 2000-11 | AIN 압전체를 이용한 suspended 압전박막공진기의 제조 | 주병권; 김현호; 이시형; 이전국; 오명환; 김수원 |
| 2000-12 | AlN-Si Thin Film Bulk Acoustic Over-moded Resonator | 이시형; 이전국; 김상희; 김종헌; 윤기현 |
| 2015-02 | An analysis of "non-lattice" oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film | Min Kyu Yang; Gun Hwan Kim; Hyunsu Ju; 이전국; Han-Cheol Ryu |
| 2010-05 | Annealing effect on the optical and electrical characteristic of a-IGZO thin films transistor | 김종우; 최원국; 주병권; 이전국 |
| 2000-11 | Asymmetric pulsed dc sputtered AIN thin film for FBAR application | 김주형; 이시형; 이전국; 안진호 |
| 2005-02 | Asymmetric switching behavior in Cr-doped SrZrO3 perovskite thin films | 김달영; 양민규; 이전국; 박재완 |
| 2011-02 | Biopolar Resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices | 양민규; 최선영; 이전국 |
| 2009-02 | Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory | 양민규; 박재완; 고태국; 이전국 |
| 2009-07 | Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices | 양민규; 박재완; 고태국; 이전국 |
| 2010-06 | Bipolar resistive switching behavior in Ti/MnO2/Pt structure of nonvolatile Memory Devices | 양민규; 이전국; 고태국 |
| 2012-04 | Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications | Seong, Tae-Geun; Joung, Mi-Ri; Sun, Jong-Woo; 양민규; 이전국; Ji Won Moon; Jaesung Roh; Sahn Nahm |
| 1999-07 | Bismuth composition control of SrBi2TaNbO9 thin films by heat treating Bi2O3-inserted heterostructure | 박윤백; 이전국; 정형진; 박종완 |
| 1998-06 | Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors | J. Lee*; C. H. Choi; B. H. Park; T. W. Noh; 이전국 |
| 2007-02 | Capacitance properties of nano-structure controlled alumina on polymer substrate | 정승원; 민형섭; 한정환; 이전국 |
| 1991-01 | Capacitance voltage characteristics of sol-gel derived lead titanate thin films on a silicon substrate | 이전국; C.H. Kim; 정형진 |
| 2014-02 | Carbon Nanotube/Silver Nanowire Multilayer for Low Haze Transparent Conductive Films for Flexible Touch Screen | 민형섭; 김상식; 최원국; 오영제; 이전국 |
| 2011-10 | CdSe/ZnS 양자점 전계발광소자에서 전하수송 층인 Zinc Tin Oxide의 비저항이 소자의 발광 특성에 미치는 영향 | 윤성룡; 전민현; 이전국 |
| 1997-01 | Characteristics of SrBi2Ta2O9 thin films fabricated by the r.f. magnetron sputtering technique | 이전국; 송태권; 정형진 |
| 2007-05 | Characteristics of Ta based superconducting tunnel junction | 양민규; 고태국; 이전국 |
| 1994-01 | Characterization of nitrogen-doped TiO2 thin films prepared by metalorganic chemical vapor deposition | 이동헌; 조용수; 이월인; 이전국; 정형진 |
| 2006-12 | Characterization of sputter-deposited SrZrO3:Cr films on Si substrates for commercial memory device applications | 박재완; 박종완; 이전국 |
| 1992-01 | Characterizations of selectively absorbing properties of indium tin oxide thin films by UV-VIS-IR spectroscopy | 이전국; 이동헌; 조남희 |
