| - | Defect states in silicon after laser processing. | Kim Seong Il; Min Suk-Ki; CHOI WON CHEOL; KIM EUN KYU; CHO HOON YOUNG; KIM CHUN KEUN |
| - | Direct nano-bridging of carbon nanowire using growth barrier: a possible mechanism of selective lateral growth. | Yoon-Taek Jang; Chang-Hoon Choi; LEE YUN HI; Chang-Woo Lee; Dong-Ho Kim; Ju Byeong Kwon; KIM EUN KYU; Jae-Eun Lee; Young-Soo Han; Sang-Soo Yoon; Jin-Koog Shin; Sung-Tae Kim |
| - | Direct nano-wiring of carbon nanotube using growth barrier | LEE YUN HI; 장윤택; CHOI CHANG HOON; 김동호; 이창우; 이재은; Han Yeongsoo; 윤상수; SHIN Jin-Koog; KIM SUNG TAE; KIM EUN KYU; Ju Byeong Kwon |
| - | Direct transport measurements through an ensemble of if InAs self-assembled quantum dots | 정석구; 최범호; KIM SEOK IL; 현찬경; MIN BYUNG DON; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU; Min Suk-Ki |
| - | Directional pore arrays on anodic aluminum oxide template | Cho Woon Jo; Lee Su Jin; Park Jae Gwan; Park Young Ju; KIM EUN KYU |
| - | Effect of atomic bond structure on crystal orientation dependence of carbon doping in GaAs grown by MOCVD | PARK YOUNG KYUN; Kim Seong Il; KIM YOUN; SON CHANG-SIK; KIM EUN KYU; Min Suk-Ki |
| - | Effect of crystallographic orientation on carbon incorporation into GaAs and AlGaAs epilayers grown by metalorganic chemical vapor deposition. | SON CHANG-SIK; Kim Seong Il; Min Suk-Ki; KIM EUN KYU; KIM YOUN; 최인훈 |
| - | Effect of Si doping on InAs/GaAs quantum dots | 조광식; 윤석호; 황희돈; 윤의준; 박영민; Park Young Ju; KIM EUN KYU; LIM YOUNG SU; 이정용 |
| - | Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots | 박세기; Park Young Ju; 박영민; KIM HEO JEN; KIM EUN KYU; 이천 |
| - | Effects of rapid thermal annealing on electrical properties of CBr//4-doped GaAs epilayers grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; Lee Sang Bae; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Effects of Si-molecular beam on the formation of InAs quantum dots | 박영민; Park Young Ju; 김광무; 노정현; 현찬경; KIM EUN KYU; 유근호 |
| - | Electrical and optical properties of quantum wire laser | J. C. Jang; Kim Seong Il; 황승민; KIM HEO JEN; SON CHANG-SIK; J. H. Park; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
| - | Electrical and structural properties of Si nanocrystals prepared by ion-beam-assisted electron beam deposition | K.H. Park; Y. Kim; T.H. Chung; H.J. Bark; J.Y. Yi; CHOI WON CHEOL; KIM EUN KYU |
| - | Electrical properties of carbon-doped GaAs epilayers by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; KIM EUN KYU; MIN BYUNG DON; Min Suk-Ki; 최인훈 |
| - | Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4. | SON CHANG-SIK; 황성민; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki; KIM EUN KYU; KIM YOUN |
| - | Enhancement of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4. | KIM EUN KYU; S.I. Kim; M.S. Kim; Y. Kim; S.M. Hwang; B.D. Min; C.S. Son; Min Suk-Ki |
| - | Evaluations of the thin GaN layer grown on (001) GaAs substrate | Park Young Ju; 고의관; 박일우; C.S. Park; KIM EUN KYU |
| - | Fabrication and characterization of planar resonant tunneling devices incorporating Inas self-assembled quantum dots | 정석구; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU |
| - | Fabrication and characterization of planar-type resonant tunneling devices incorporating InAs self-assembled quantum dots | KIM EUN KYU; 정석구; 황성우; PARK JEONG HO |
| - | Fabrication of AlGaAs/GaAs heteroface solar cells | KIM HEO JEN; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; 황성민; 김태환 |
| - | Fabrication of high-efficiency heteroface AlGaAs/GaAs solar cells grown by MOCVD | 황성민; Kim Seong Il; 이달진; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM YOUN |
| - | Fabrication of in-plane gated transistor with electron-beam lighography technique | 한철구; 김광무; 정석구; 최범호; KIM EUN KYU; Min Suk-Ki; PARK JEONG HO |
| - | Fabrication of quantum dot transistors incorporating single self-assembled quantum dot | 황성우; 정석구; PARK JEONG HO; KIM YOUN; KIM EUN KYU |
| - | Fabrication of quantum structures by using patterned gallium oxide deposited GaAs substrates | Park Young Ju; Min Suk-Ki; KIM EUN KYU; 한철구; 김광무; 장영준; 오치성; PARK JEONG HO |
| - | Fabrication of wirelike In0.5Ga0.5As quantum dots on 2˚-off GaAs (100) substrates | KIM HEO JEN; Park Young Ju; 박영민; 박세기; KIM EUN KYU; 김태환 |
| - | Fabrications of wire-like InAs quantum dots on 2o-off GaAs (100) substrates by control of the InAs layer thickness | KIM HEO JEN; Park Young Ju; 박영민; KIM EUN KYU; 김태환 |
| - | Formation and characterization of nano-crystalline silicon | CHOI WON CHEOL; KIM EUN KYU |
| 1996-06 | Formation of a thin nitrided GaAs layer. | Park Young Ju; KIM EUN KYU; Min Suk-Ki; Kim Seong Il; Han Il Ki; P. O'Keeffe; H. Mutoh; S. Hirose; K. Hara; H. Munekata; H. Kukimoto |
| - | Formation of silicon nano-crystallites by electron cyclotron resonance chemical vapor deposition and ion beam assisted electron beam deposition | KIM EUN KYU; Min Suk-Ki; CHOI WON CHEOL; PARK JONG YEUN |
| - | Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array layer. | SON CHANG-SIK; KIM TAE-GEUN; Kim Seong Il; PARK JEONG HO; 황성민; Min Suk-Ki; KIM EUN KYU; KPARK KYUNG HYUN |
