| - | Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | High uniform growth of epilayers by LPMOCVD. | KIM MOO SUNG; KIM YOUN; CHO HOON YOUNG; 강명주; Kim Seong Il; Min Suk-Ki |
| - | Improvement in the characteristics of ammonia plasma treated MSQ(Methyl Silsesquioxane) | 심현상; 김동준; KIM CHUN KEUN; Kim Seong Il; Kim Yong Tae; 전형탁 |
| - | Influence of rapid thermal annealing of cobalt coatacts to p-GaN | Jewon Kim; PARK YOUNG KYUN; Kim Seong Il; Kim Yong Tae; 최인훈; Akira Yoshida; 김희준 |
| 1999-05 | InGaN epilayer 의 투과 스펙트럼 비교 및 광특성 분석 | Jewon Kim; PARK YOUNG KYUN; Kim Seong Il; Kim Yong Tae; 최인훈; Lee Seock Heon; 이정희 |
| - | Ionization energy of Ge in AlGaAs | KIM HEO JEN; Kim Seong Il; CHOI WON CHEOL; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
| - | Laser direct dry etching for Al//0//.//3Ga//0//.//7As/GaAs multi-layer structure. | Kim Seong Il; Min Suk-Ki; KIM EUN KYU; 박세기; 이천 |
| - | Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; KANG JOON MO; 황성민; 박양근 |
| - | Lateral growth rate control of GaAs on patterned substrates by CCl//4 and CBr//4 during MOCVD. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; MIN BYUNG DON; Min Suk-Ki |
| - | Lateral growth rate enhancement on patterned GaAs substrates with CCl//4 by MOCVD. | KIM YOUN; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki |
| - | Lateral mode behavior of GaAs/AlGaAs DH laser diode by computer simulation. | Kim Seong Il; Min Suk-Ki |
| - | Luminescence study of carbon doped GaAs grown on GaAs(311)A substrate by MOCVD | KIM EUN KYU; Min Suk-Ki; S. Cho; D. Lee; SON CHANG-SIK; CHOI WON CHEOL; Kim Seong Il |
| - | Maskless selective epitaxial growth on patterned GaAs substrates by atmospheric pressure MOCVD | SON CHANG-SIK; Kim Seong Il; PARK YOUNG KYUN; 황성민; 한철구; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | MOCVD 로 성장시킨 GaAs/AlGaAs DH laser diode 의 발진 특성 및 computer simulation 에 의한 횡모드 거동 . | Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
| - | MOCVD 법을 이용한 AlGaAs/GaAs HEMT 의 제작 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | MOCVD 에 의한 화합물반도체 에피 성장 기술 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | Modeling for GaAs/AlGaAs buried heterostructure laser diode. | Kim Seong Il; EOM KYUNG SOOK; Min Suk-Ki |
| - | New technique for application of large-area GaAs/AlGaAs quantum wire arrays to low threshold and high power laser. | KIM EUN KYU; Min Suk-Ki; T. G. Kim; J. H. Park; K. H. Park; S. M. Hwang; C. S. Son; Kim Seong Il; M. S. Kim |
| - | One-step selective growth of GaAs on V-groove patterned GaAs substrate using CBr4 and CCl4 | KIM EUN KYU; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; SON CHANG-SIK; 한철구; 황성민; Min Suk-Ki; 최인훈 |
| 1998-04 | p-AlGaAs/p-GaAs/n-GaAs 이종접합 태양전지의 구조와 금속전극패턴의 최적화에 관한 분석 | KIM HEO JEN; 이대욱; 김태환; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
| - | Pulsed excimer laser annealing effects of ion implanted silicon on insulator. | Kim Seong Il; Min Suk-Ki; KIM EUN KYU; Kim Yong Tae; KIM CHUN KEUN; KIM MOO SUNG |
| - | Relationships among coercive voltage, memory window and electric distribution in ferroelectric gate structure | Sung-Kyun Lee; Kim Yong Tae; Kim Seong Il; 이철의 |
| - | RIE 로 처리된 GaAs 표면의 전기적 특성연구 . | Kim Seong Il; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; 조준환; 임한조; Yoo Jong Lee; LEE MYOUNG BOG |
| - | Role of restrained vertical growth in realizing one-step maskless selective epitaxy on patterned GaAs substrate | SON CHANG-SIK; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; 최인훈 |
| - | Simulations of epitaxial growth on patterned GaAs substrates | KIM HEO JEN; Kim Seong Il; SON CHANG-SIK; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
| - | Structural and electrical characteristics of ZrO ₂ as a gate dielectric and buffer layer grown by RF magnetron sputtering | 임근식; 최훈상; 이종한; Kim Yong Tae; Kim Seong Il; 최인훈 |
| - | Surface orientation dependent carbon incorporation in to GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; MIN BYUNG DON; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Temperature dependence of photoluminescence peak from carbon-doped GaAs epilayers grown on high miller index GaAs substrates | Cho Shinho; SON CHANG-SIK; 이달진; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki |
| - | Temperature dependence of the electrical properties of carbon doped GaAs. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG |
| - | Temperature-dependent PL spectra of quantum wire array and new technique for its application to laser. | SON CHANG-SIK; KIM TAE-GEUN; KPARK KYUNG HYUN; 황성민; Kim Seong Il; KIM MOO SUNG; Min Suk-Ki; PARK JEONG HO |
