Browsing byAuthorGeum, Dae-Myeong
Showing results 1 to 30 of 40
| Issue Date | Title | Author(s) |
|---|---|---|
| 2020-02 | 3D Stackable Synaptic Transistor for 3D Integrated Artificial Neural Networks | Kim, Seong Kwang; Jeong, YeonJoo; Bidenko, Pavlo; Lim, Hyeong-Rak; Jeon, Yu -Rim; Kim, Hansung; Lee, Yun Jung; Geum, Dae-Myeong; Han, JaeHoon; Choi, Changhwan; Kim, Hyung-jun; Kim, SangHyeon |
| 2017-07 | A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generator | Kil, Tae-Hyeon; Kim, Sanghyeon; Jeong, Dae-Han; Geum, Dae-Myeong; Lee, Sooseok; Jung, Sung-Jin; Kim, Sangtae; Park, Chan; Kim, Jin-Sang; Baik, Jeong Min; Lee, Ki-Suk; Kim, Chang Zoo; Choi, Won Jun; Baek, Seung-Hyub |
| 2016-12 | Cost-effective Fabrication of In0.53Ga0.47As-on-Insulator on Si for Monolithic 3D via Novel Epitaxial Lift-Off (ELO) and Donor Wafer Re-use | Kim, Seong Kwang; Shim, Jaephil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Kim, Yeon-Su; Kim, Sang Hyeon; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-jun; Kim, Dong Myong; Kang, Hang-Kyu |
| 2023-04 | Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors | Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon |
| 2021-06 | Electrical Analysis for Wafer-Bonded Interfaces of p(+)GaAs/n(+)InGaAs and p(+)InGaAs/n(+)InGaAs | Geum, Dae-Myeong; Kim, Seong Kwang; Lim, Hyeong-Rak; Park, Juhyuk; Jeong, Jaeyong; Han, Jae Hoon; Choi, Won Jun; Kim, Hyo-Jin; Kim, Sanghyeon |
| 2017-01-23 | Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density | Kim, Seong Kwang; Geum, Dae-Myeong; Shim, Jae-Phil; Kim, Chang Zoo; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Sanghyeon; Kim, Dong Myong |
| 2015-09 | Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate | Kim, SangHyeon; Park, Min-Su; Geum, Dae-Myeong; Kim, Hosung; Ryu, GuenHwan; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Choi, Won Jun |
| 2017-04-10 | Fabrication of high-quality GaAs-based photodetector arrays on Si | Kim, SangHyeon; Geum, Dae-Myeong; Park, Min-Su; Kim, Ho-Sung; Song, Jin Dong; Choi, Won Jun |
| 2017-09 | Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques | Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon |
| 2022 | Free-carrier absorption-assisted photodetection using a waveguide-integrated bolometer with flat spectral response for integrated optical sensors | Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; You, Jong-Bum; Yoon, Hyeonho; Kim, Joon Pyo; Baek, Woo Jin; Han, Jae-Hoon; Kim, SangHyeon |
| 2016-08 | Fully subthreshold current-based characterization of interface traps and surface potential in III-V-on-insulator MOSFETs | Kim, Seong Kwang; Lee, Jungmin; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Sanghyeon; Kim, Dong Myong |
| 2015-10 | GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding | Kim, SangHyeon; Geum, Dae-Myeong; Park, Min-Su; Kim, Chang Zoo; Choi, Won Jun |
| 2024-05 | Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET | Kuk, Song-Hyeon; Choi, Seongjun; Kim, Hyeong Yun; Ko, Kyul; Jeong, Jaeyong; Geum, Dae-Myeong; Han, Jae-Hoon; Park, Ji-Hyeon; Jeon, Dae-Woo; Kim, Sang-Hyeon |
| 2018-05 | Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials | Kim, Sang-Hyeon; Kim, Seong-Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Ju, Gunwu; Kim, Han-Sung; Lim, Hee-Jeong; Lim, Hyeong-Rak; Han, Jae-Hoon; Lee, Subin; Kim, Ho-Sung; Bidenko, Pavlo; Kang, Chang-Mo; Lee, Dong-Seon; Song, Jin-Dong; Choi, Won Jun; Kim, Hyung-Jun |
| 2017-04 | Heterogeneously integrated high-performance GaAs single-junction solar cells on copper | Geum, Dae-Myeong; Park, Min-Su; Kim, SangHyeon; Choi, Won Jun; Kim, Chang Zoo; Yoon, Euijoon |
| 2024-06 | High electron mobility in metamorphic epitaxial InAs0.7Sb0.3 compound and its p-i-n photodetector | Kang, Sooseok; Roh, Il-Pyo; Kim, Sang Hyeon; Kang, Moon Hee; Geum, Dae-Myeong; Song, Jin Dong |
| 2021-01 | High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb | Kim, Sang-Hyeon; Roh, Ilpyo; Han, Jae-Hoon; Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Soo Seok; Kang, Hang-Kyu; Lee, Woo Chul; Kim, Seong Keun; Hwang, Do Kyung; Song, Yun Heub; Song, Jin Dong |
| 2018-08-27 | High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer | Roh, IlPyo; Kim, SangHyeon; Geum, Dae-Myeong; Lu, Wenjie; Song, YunHeub; del Alamo, Jesus A.; Song, JinDong |
| 2022-11 | High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors | Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; You, Jong-Bum; Yoon, Hyeonho; Kim, Joon Pyo; Baek, Woo Jin; Kim, Inki; Han, Jae-Hoon; Kim, SangHyeon |
| 2017-01-05 | High-speed epitaxial lift-off for III-V-on-insulator transistors on Si substrates | Kim, SangHyeon; Geum, Dae-Myeong; Kim, Seong Kwang; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun |
| 2019-08 | Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs | Kim, Sanghyeon; Kim, Seong Kwang; Shin, Sanghoon; Han, Jae-Hoon; Geum, Dae-Myeong; Shim, Jae-Phil; Lee, Subin; Kim, Hansung; Ju, Gunwu; Song, Jin Dong; Alam, M. A.; Kim, Hyung-Jun |
| 2019-09 | Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETs | Lim, Hyeong-Rak; Kim, Seong Kwang; Han, Jae-Hoon; Kim, Hansung; Geum, Dae-Myeong; Lee, Yun-Joong; Ju, Byeong-Kwon; Kim, Hyung-Jun; Kim, Sanghyeon |
| 2018-05 | Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel | Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon |
| 2019-09-30 | Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode | Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Kim, Hansung; Han, Jae-Hoon; Hwang, Do Kyung; Song, Jin Dong; Kim, Hyung-jun; Kim, Sanghyeon |
| 2015-05 | In0.53Ga0.47As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide | Kim, Sang Hyeon; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun |
| 2019-09-06 | InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K | Kang, Soo Seok; Geum, Dae-Myeong; Kwak, Kisung; Kang, Ji-Hoon; Shim, Cheol-Hwee; Hyun, HyeYoung; Kim, Sang Hyeon; Choi, Won Jun; Choi, Suk-Ho; Park, Min-Chul; Song, Jin Dong |
| 2015-10-19 | InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off | Park, Min-Su; Geum, Dae-Myeong; Kyhm, Ji Hoon; Song, Jin Dong; Kim, SangHyeon; Choi, Won Jun |
| 2016-10 | Low-Subthreshold-Slope Asymmetric Double-Gate GaAs-on-Insulator Field-Effect-Transistors on Si | Kim, SangHyeon; Geum, Dae-Myeong; Kim, Seong Kwang; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun |
| 2020-03 | Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process | Geum, Dae-Myeong; Kim, Seong Kwang; Lee, Subin; Lim, Donghwan; Kim, Hyung-Jun; Choi, Chang Hwan; Kim, Sang-Hyeon |
| 2019-06 | Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection | Geum, Dae-Myeong; Kim, SangHyeon; Kim, SeongKwang; Yoon, Euijoon; Kylun, JiHoon; Song, Jindong; Choi, Won Jun; Kang, SooSeok |
KIST 리포지터리는 국립중앙도서관 OAK 보급사업으로 구축되었습니다.