| 1994-06-15 | 2-TEMPERATURE TECHNIQUE FOR PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION GROWTH OF SILICON-NITRIDE ON INP | HER, J; LIM, H; KIM, CH; HAN, IK; LEE, JI; KANG, KN; KIM, JE; PARK, HY |
| 1993-12 | ANALYSIS OF GAAS SCHOTTKY CONTACT TRAVELING-WAVE OPTICAL COUPLERS | CHOI, WJ; LEE, JI; KANG, KN; HONG, SC; CHO, KM |
| 1993-03 | CONSTANT CAPACITANCE TECHNIQUE TO STUDY ELECTRICAL INSTABILITIES IN INP MIS PROVIDED BY PECVD SILICON-NITRIDE | KIM, CH; KWON, SD; CHOE, BD; HAN, IK; LEE, JI; KANG, KN; PARK, HL; LIM, H |
| 1993-01-15 | DEPOSITION TEMPERATURE-DEPENDENCE OF ELECTRICAL INSTABILITY IN AN INP METAL-INSULATOR SEMICONDUCTOR CAPACITOR PROVIDED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE | LEE, MB; HAN, IK; LEE, YJ; LEE, JI; KANG, KN; LIM, H |
| 1995-10-15 | DIELECTRIC CAP DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER | CHOI, WJ; LEE, S; KIM, Y; KIM, SK; LEE, JI; KANG, KN; PARK, N; PARK, HL; CHO, K |
| 1994-04-15 | EFFECT OF ULTRAVIOLET ILLUMINATION ON THE CHARGE TRAPPING BEHAVIOR IN SINX/INP METAL-INSULATOR-SEMICONDUCTOR STRUCTURE PROVIDED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION | KIM, CH; HAN, IK; LEE, JI; KANG, KN; KWON, SD; CHOE, B; PARK, HL; HER, J; LIM, H |
| 1992-05-16 | EFFECTS OF CARRIER-VELOCITY SATURATION ON THE CHARACTERISTICS OF SHORT CHANNEL MOSFETS WITH LIGHTLY DOPED DRAINS | LEE, MB; LEE, JI; KANG, KN; YOON, KS; HONG, S; LIM, KY |
| 1994-03-01 | ENHANCED DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY RAPID THERMAL ANNEALING USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER GROWN AT HIGH RF POWER CONDITION | CHOI, WJ; LEE, JI; HAN, IK; KANG, KN; KIM, Y; PARK, HL; CHO, K |
| 1995-04-01 | ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING | CHOI, WJ; LEE, S; ZHANG, JM; KIM, Y; KIM, SK; LEE, JI; KANG, KN; CHO, K |
| 1991-05 | GROWTH AND CHARACTERIZATION OF SILICON-NITRIDE FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION | HAN, IK; LEE, YJ; JO, JW; LEE, JI; KANG, KN |
| 1992-01-15 | GROWTH OF CDTE EPITAXIAL-FILMS ON PARA-INSB(111) BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION | KIM, TW; KOO, BJ; JUNG, M; KIM, SB; PARK, HL; LIM, H; LEE, JI; KANG, KN |
| 1991-05-01 | HEATING EFFECT IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE | HAN, IK; LEE, YJ; JO, JH; LEE, JI; KANG, KN |
| 1995-05 | HR-COATED FACET EFFECT ON THE SPECTRAL CHARACTERISTICS OF A 3-SECTION DBR TUNABLE LASER | LEE, S; CHOI, WJ; HAN, IK; WOO, DH; KIM, SH; LEE, JI; KANG, KN; PARK, HL |
| 1992-10 | INTERFACE CONSTRAINTS IN INP MIS STRUCTURES | KIM, CH; CHOE, B; LIM, H; LEE, JI; KANG, KN |
| 1991-06-01 | INTERFACE PROPERTIES AND CAPACITANCE-VOLTAGE BEHAVIOR OF INDIUM-PHOSPHIDE METAL-INSULATOR-SEMICONDUCTOR PREPARED BY PLASMA-ASSISTED OXIDATION | LIM, H; BAGLIO, JA; DECOLA, N; PARK, HL; LEE, JI; KANG, KN |
| 1994-12 | LOW DARK CURRENT AND HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR ON SULFUR-TREATED INP | HAN, IK; HER, J; BYUN, YT; LEE, S; WOO, DH; LEE, Jung Il; KIM, SH; KANG, KN; PARK, HL |
| 1993-04-15 | MAGNETOTRANSPORT MEASUREMENTS ON AN IN0.52AL0.48AS/IN0.65GA0.35AS SINGLE QUANTUM-WELL | KIM, TW; JUNG, M; LEE, JI; KANG, KN; YOO, KH; IHM, G; LEE, SJ |
| 1989-05-25 | MOBILITY REDUCTION PARAMETERS IN SHORT-CHANNEL MOSFETS | LEE, JI; LEE, MB; KANG, KN; PARK, KO |
| 1993-08 | MODULATION CHARACTERISTICS OF A TUNABLE MULTISECTION DBR LASER | LEE, S; LEE, SY; PARK, HL; CHOI, WJ; LEE, JI; KANG, KN |
| 1991-09-01 | REMOTE PLASMA-ASSISTED OXIDATION OF INP | LEE, JI; KANG, KN; BAGLIO, JA; LIM, HJ; PARK, HL |
| 1990-06-21 | SIMPLE EXTRACTION METHOD FOR MOBILITY PARAMETERS IN SI-MOSFETS AT 77-K | LEE, JI; LEE, MB; KANG, KN; PARK, KO |
| 1990-10-11 | SIMPLE METHOD TO EXTRACT GATE VOLTAGE DEPENDENT SOURCE DRAIN RESISTANCE IN MOSFETS | LEE, JI; LEE, MB; LEE, YJ; HAN, IK; KANG, KN; PARK, KO |
| 1992-12-15 | SPECTROSCOPIC ELLIPSOMETRIC MEASUREMENTS OF PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION-GROWN SINXINP STRUCTURE | HAN, IK; LEE, YJ; LEE, JI; KANG, KN; KIM, SY |
| 1992-11-15 | STUDY OF CHARGE TRAPPING INSTABILITIES IN A SILICON-NITRIDE INDIUM-PHOSPHIDE METAL-INSULATOR-SEMICONDUCTOR STRUCTURE BY THE CONSTANT-CAPACITANCE METHOD | KIM, CH; CHOE, BD; LIM, H; HAN, IK; LEE, JI; KANG, KN |
| 1993-10 | STUDY ON THE LOW-FIELD CHARGE-TRAPPING PHENOMENA IN THE SILICON-NITRIDE INP STRUCTURE | KIM, CH; KWON, SD; CHOE, BD; HAN, IK; LEE, JI; KANG, KN; HER, J; LIM, H |
